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Effect of Zn doping on SnAg solder microstructure and electromigration stability
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10.1063/1.3211985
/content/aip/journal/jap/106/5/10.1063/1.3211985
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/5/10.1063/1.3211985
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The plot of resistance change vs EM stress time for (a) Sn1.0Ag, (b) Sn1.0Ag0.2Zn, (c) Sn1.0Ag0.4Zn, and (d) An1.0Ag0.6Zn.

Image of FIG. 2.
FIG. 2.

The lognormal probability plot of the unreliability function for three Sn1.0Ag0.6Zn experiments Sn1.0Ag0.2Zn, Sn1.0Ag0.4Zn, and Sn1.0Ag, and Sn1.8Ag EM results.

Image of FIG. 3.
FIG. 3.

The SEM micrographs of cathode interface of the early failed samples: (a) Sn1.0Ag0.2Zn after 283 h EM stress, (b) Sn1.0Ag0.4Zn after 283 h EM stress, and (c) Sn1.0Ag0.6Zn after 394 h EM stress.

Image of FIG. 4.
FIG. 4.

The EPMA maps of Zn-doped solders after EM stress: (a) Sn1.0Ag0.2Zn after 879 h EM stress, (b) Sn1.0Ag0.4Zn after 879 h EM stress, and (c) Sn1.0Ag0.6Zn after 996 h EM stress. The maps from left to right are Cu, Ag, and Zn maps, respectively.

Image of FIG. 5.
FIG. 5.

Sn10.Ag0.6Zn solder with Cu as the cathode and Ni UBM stack as the anode. (a) Plot of resistance change vs EM stress time. (b) SEM image of cathode interface after 2536 h EM stress.

Image of FIG. 6.
FIG. 6.

Sn10.Ag0.6Zn solder with Ni UBM stack on both ends. (a) Plot of resistance change vs EM stress time. (b) Optical microscope image of cathode interface after 2166 h EM stress.

Image of FIG. 7.
FIG. 7.

TEM image of Sn1.0Ag0.6Zn solder/Cu interface after 969 h EM stressing. (a) 2000–3000 nm thick fine-grained is found under a large grain IMC. (b) High magnification TEM image of Sn1.0Ag0.6Zn solder/Cu interface after 969 h EM stressing. A continuous Zn rich interfacial layer is found between and Cu.

Image of FIG. 8.
FIG. 8.

A line profile to show the composition of the Zn rich interfacial layer.

Image of FIG. 9.
FIG. 9.

SEM image of the cathode interface of the Sn10.Ag0.6Zn solder samples after 969 h EM stress. The TEM liftoff region is shown in (a). (b) The crack revealed after FIB at the cathode side.

Image of FIG. 10.
FIG. 10.

TEM images of Ni/solder interface (cathode) after EM stress. The image on the left shows a small attack in the Ni UBM. The image on the right shows the Ni UBM without attack.

Image of FIG. 11.
FIG. 11.

STEM image of the Ni UBM interface without attack, left, and the line scan, right.

Image of FIG. 12.
FIG. 12.

STEM image of the Ni UBM interface at attack, left, and the line scan, right.

Image of FIG. 13.
FIG. 13.

STEM image and the Cu, Zn, and Ni EDS elemental maps of the attacked region.

Image of FIG. 14.
FIG. 14.

EPMA line scan of Cu/solder interface of the samples after 969 h EM stress.

Image of FIG. 15.
FIG. 15.

EPMA line scan of Ni/solder interface of the samples after 969 h EM stress.

Image of FIG. 16.
FIG. 16.

EBSD maps of Sn1.0Ag and Sn10.Ag0.6Zn solders before and after EM stress. Electrons enter from the left.

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/content/aip/journal/jap/106/5/10.1063/1.3211985
2009-09-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Zn doping on SnAg solder microstructure and electromigration stability
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/5/10.1063/1.3211985
10.1063/1.3211985
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