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Controllable spin-dependent transport in armchair graphene nanoribbon structures
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10.1063/1.3212984
/content/aip/journal/jap/106/5/10.1063/1.3212984
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/5/10.1063/1.3212984
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the considered armchair GNR structures with the number of carbon chains between two edges: (a) graphitic and (b) normal-conducting leads. The latter ones are modeled by square lattices. A magnetic gated insulator is deposited to create a spin-dependent potential barrier in the center of device.

Image of FIG. 2.
FIG. 2.

(a) Oscillation of conductance vs the barrier height in the GGG structures with different widths: (semiconducting, dashed) and 23 (metallic, solid line). (b) illustrates the transmission coefficient calculated from Eq. (10) for different modes . Other parameters are , , and .

Image of FIG. 3.
FIG. 3.

(a) Spin polarization as a function of the barrier height for the same structures as in Fig. 2(a). (b) shows an example of the effects of the different ribbon widths on the spin polarization: (dashed), 27 (dashed-dotted), and 33 (solid line). Everywhere , , and .

Image of FIG. 4.
FIG. 4.

Comparison of conductance (a) and LDOS (b) in different structures: graphitic (dashed) and normal-conducting (solid lines, ) leads. Everywhere , , , , and .

Image of FIG. 5.
FIG. 5.

[(a) and (b)] Comparison of spin polarization in the different structures: graphitic (dashed) and normal-conducting (solid lines, ) leads. [(c) and (d)] The spin polarization in the latter one with different coupling strengths: (dashed), (dashed-dotted), and (solid lines). The ribbon widths are [(a) and (c)] and 23 [(b) and (d)]. Other parameters are , , , and .

Image of FIG. 6.
FIG. 6.

(a) LDOS illustrating the existence of confined states in the device and (b) conductance in the NGN junctions as a function of the Fermi energy for different device lengths: (solid) and 102 nm (dashed lines). (c) shows the dependence of energy spacing of confined states on the inverse of device length. Everywhere , , , and .

Image of FIG. 7.
FIG. 7.

(a) Conductance and (b) spin polarization in the NGN structures as functions of the barrier height for different device lengths: 68 nm (solid), 74 nm (dashed), and 79 nm (dashed-dotted lines). The oscillation of vs the device length for different values of (c) [630 meV (solid), 655 meV (dashed-dotted), and 681 meV (dashed line)] and of (d) [250 meV (dashed-dotted), 300 meV (solid), and 350 meV (dashed line)]. Other parameters are , , [in (a)–(c)], , [in (d)] and .

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/content/aip/journal/jap/106/5/10.1063/1.3212984
2009-09-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controllable spin-dependent transport in armchair graphene nanoribbon structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/5/10.1063/1.3212984
10.1063/1.3212984
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