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Study on mechanism of crystallization in films on Si substrates by in-depth profile analysis using photoemission spectroscopy
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10.1063/1.3212979
/content/aip/journal/jap/106/6/10.1063/1.3212979
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3212979
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

O -edge photoemission spectra of annealing-temperature dependence of (a) 2.5 and (b) 3.5 nm films.

Image of FIG. 2.
FIG. 2.

Core-level photoemission spectra of intensity ratios of (a) Hf and (b) Si oxide component to Si bulk component in films depending on annealing temperature.

Image of FIG. 3.
FIG. 3.

Core-level photoemission spectra of intensity ratios of Si oxide component to Hf in films showing annealing-temperature dependence. The dotted and solid lines indicate experimental data and simulated curves, respectively.

Image of FIG. 4.
FIG. 4.

Annealing-temperature dependence of in-depth profiles of films; [(a)–(c)] as-grown, 700 and , respectively, for the 2.5 nm film and [(d)–(f)] as-grown, 700 and , respectively, for the 3.5 nm film.

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/content/aip/journal/jap/106/6/10.1063/1.3212979
2009-09-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3212979
10.1063/1.3212979
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