O -edge photoemission spectra of annealing-temperature dependence of (a) 2.5 and (b) 3.5 nm films.
Core-level photoemission spectra of intensity ratios of (a) Hf and (b) Si oxide component to Si bulk component in films depending on annealing temperature.
Core-level photoemission spectra of intensity ratios of Si oxide component to Hf in films showing annealing-temperature dependence. The dotted and solid lines indicate experimental data and simulated curves, respectively.
Annealing-temperature dependence of in-depth profiles of films; [(a)–(c)] as-grown, 700 and , respectively, for the 2.5 nm film and [(d)–(f)] as-grown, 700 and , respectively, for the 3.5 nm film.
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