Thermal conductivities due to carriers and phonons for bulk bismuth.
Dependence of normalized thermal conductivity on the bismuth wire diameter relative to bulk bismuth for (a) carrier component , (b) phonon component , and (c) total contribution at various temperatures.
Temperature dependence of the mean free paths of carriers , phonons , and the total contribution .
Temperature dependence of the effective thermal conductivity in a diameter bismuth wire and the reduction ratio relative to bulk bismuth. and represent the contributions to the total thermal conductivity from the carriers and phonons, respectively. The inset shows the reduction ratio due to the carriers and phonons for a diameter wire.
Temperature dependence of the effective thermal conductivity for various wire diameters. The inset shows the normalized thermal conductivity .
dependence of the normalized thermal conductivity at various normalized Debye temperatures within covalent bonded materials (Si, Ge, C, and Sn) and bismuth at 300 K. The label indicates the normalized Debye temperature for a diameter wire for material M.
dependence of at various normalized Debye temperatures of some covalently bonded materials (Si, Ge, C, and Sn) and bismuth for the thermal conductivity due to phonons at 300 K.
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