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Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system
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10.1063/1.3223288
/content/aip/journal/jap/106/6/10.1063/1.3223288
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3223288

Figures

Image of FIG. 1.
FIG. 1.

Comparison of optical gain spectra and corresponding alpha factor calculated with and without self-consistent effects for single 8 nm wide quantum wells. Empty symbols refer to the alpha factor, and half-empty symbols refer to the gain.

Image of FIG. 2.
FIG. 2.

Left axis: marked with empty symbols, spectra of the linewidth enhancement factor for various nitrogen compositions and a well width of 8 nm. Right axis: marked with half-filled symbols, corresponding optical gain spectra.

Image of FIG. 3.
FIG. 3.

Spectra of the linewidth enhancement factor for various well widths and a nitrogen composition of 0.5%.

Image of FIG. 4.
FIG. 4.

Spectra of the linewidth enhancement factor for different values of sheet carrier density. The nitrogen composition is 1.0%, and the well width is 7 nm.

Image of FIG. 5.
FIG. 5.

Gain peak and linewidth enhancement factor as functions of carrier density. The nitrogen composition is 1.0%, and the well width is 7 nm.

Image of FIG. 6.
FIG. 6.

Comparison of the optical gain spectra and the corresponding alpha factor for calculations with and without self-consistent effects for the double, 8 nm wide each, quantum well system. Empty symbols refer to the alpha factor, and half-empty symbols refer to the gain.

Image of FIG. 7.
FIG. 7.

Comparison of the optical gain spectra and the corresponding alpha factor for calculations with and without self-consistent effects for the triple, 8 nm wide each, quantum well system. Empty symbols refer to the alpha factor, and half-empty symbols refer to the gain.

Image of FIG. 8.
FIG. 8.

Left axis: marked with empty symbols, spectra of the linewidth enhancement factor for two MQW systems with a well width of 8 nm. Right axis: marked with half-filled symbols, corresponding optical gain spectrum.

Tables

Generic image for table
Table I.

Summary of experimental and theoretical values of the linewidth enhancement factor for the InGaAsN system.

Generic image for table
Table II.

Heterostructure used in the calculations.

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/content/aip/journal/jap/106/6/10.1063/1.3223288
2009-09-16
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3223288
10.1063/1.3223288
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