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Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded multilayers
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10.1063/1.3223322
/content/aip/journal/jap/106/6/10.1063/1.3223322
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3223322

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image showing phase separation in a layer grown on a GaAs substrate. Such a compositional separation results in an XRD double-peak phenomenon, as shown in the inset.

Image of FIG. 2.
FIG. 2.

(004) XRD rocking curves of the samples with different multilayers where the constituent layer thicknesses are (a) 0, (b) 10, (c) 20, (d) 40, and (e) 60. The arrows on curves (a)–(c) indicate the appearance of a shoulder peak.

Image of FIG. 3.
FIG. 3.

FWHM of (004) diffracted peak as a function of constituent layer thickness. The inset represents the schematic layer structure used in this study.

Image of FIG. 4.
FIG. 4.

Comparison of PL spectra for the samples with and without the multilayers. The corresponding FWHM values of the PL emission peaks are shown in the inset.

Image of FIG. 5.
FIG. 5.

Representative eight-atom lattices of (a) , (b) , and (c) obtained from density functional theory-based first principles. The atoms are represented by spheres: In (large), Ga (middle), and P (small).

Tables

Generic image for table
Table I.

Summary of calculated elastic constants and coefficients for , , and .

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/content/aip/journal/jap/106/6/10.1063/1.3223322
2009-09-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1−xInxP multilayers
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3223322
10.1063/1.3223322
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