characteristics measured in two sweep directions on a NC-1 film of . The insets illustrate the suggested band diagrams of the nanocrystallite charging and discharging processes during and after the filling pulse (top and bottom insets, respectively). For simplicity, only one NC, located in the vicinity of the Si-substrate interface, is depicted in the insets.
-DLTS spectra of the samples NC-1 (at ) and NC-2 (at ). The constant voltage was 0 V and the filling pulse bias was .
Arrhenius plots of the -DLTS peaks as measured at different Si phase contents along the substrates of the sample sets NC-1 and NC-2. These contents are indicated in the figure. The extracted two types of levels are distinguished by their relatively larger (E1) and lower (E2) cross-sections.
The dependence of the two dimensional densities of traps on the Si phase content, for the two sets of samples, NC-1 and NC-2 that we studied by -DLTS.
The trapped charge density as a function of the filling pulse duration for two samples of the NC-2 set. The measurements were taken at with a filling pulse amplitude of .
The dependence of the PL peak intensity on the silicon phase content for the two sets of samples used in the present study. The PL intensity values were taken at the wavelengths of 780 nm, for the NC-1 set of samples, and at 850 nm, for the NC-2 set of samples.
The energies, , of the deep traps as extracted from our -DLTS spectra for samples of different -values. The values are the energy separations between the levels for a given . Also shown are the quantum dot sizes (diameters), , as estimated by comparing the values with the theoretical predictions of Refs. 29 and 9.
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