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Characterization of thick film poly(triarylamine) semiconductor diodes for direct x-ray detection
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10.1063/1.3225909
/content/aip/journal/jap/106/6/10.1063/1.3225909
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3225909

Figures

Image of FIG. 1.
FIG. 1.

Mass attenuation coefficient of the photon cross section for PTAA, calculated using XCOM. Inset: quantum efficiency (QE) for PTAA films of increasing thickness at incident x-ray photon energies of (●) 10 keV, (◼) 20 keV, (○) 60 keV, (▼) 300 keV, and (▲) 6 MeV.

Image of FIG. 2.
FIG. 2.

Comparison of the UV-vis (dashed line) and PL (solid line) spectra of PTAA. The laser line (L) and the peaks due to structural resonance (A–D) are indicated. Also shown (inset) is the chemical structure of PTAA.

Image of FIG. 3.
FIG. 3.

Typical dc characteristics of PTAA diodes. Semilog current-voltage characteristic of (A) ITO/PEDOT:PSS/PTAA/Au and (B) ITO/PEDOT:PSS/Al diodes with PTAA layers annealed at (solid line) and (dash line). Inset: Linear current-voltage plots for the devices. (C) Fitting of the data using the Poole–Frenkel conduction model (dashed lines). Inset in (C): energy levels (in eV) in the various components of the diodes.

Image of FIG. 4.
FIG. 4.

Comparison of the UV-vis (solid line) and optical photocurrent spectra for ITO/PTAA/metal diodes: with gold electrodes, with illumination through (A) the ITO and (B) the Au, and with aluminum electrodes, with illumination through the ITO (C) and the Al (D). In each case, the ITO electrode is biased positively (●) and negatively (▲).

Image of FIG. 5.
FIG. 5.

Thermal analysis of PTAA. (A) MDSC thermogram (inset: full range) and (B) thermogravimetric analysis of (P) dry PTAA powder and (F) freshly cast PTAA thick film (inset: full range for P).

Image of FIG. 6.
FIG. 6.

Corrected x-ray photocurrent vs applied voltage at increasing dose rates for a reverse-biased ITO/PEDOT:PSS/PTAA/Al diode with a thick PTAA layer annealed at and irradiated through the ITO electrode. Dose rates: (a) , (b) , (c) , (d) , (e) , (f) , and (g) . Inset: corrected x-ray photocurrent vs x-ray dose rate at −300 V applied operating voltage. Data in both cases are inverted for clarity.

Image of FIG. 7.
FIG. 7.

X-ray photocurrent vs applied dose rate measured (●) after completion of the diode and (▲) 6 months later for a reverse-biased ITO/PEDOT:PSS/PTAA/Au diode with a thick PTAA layer. The dashed line is the regression line for all the data in the plot .

Tables

Generic image for table
Table I.

Deposition conditions for polymer films.

Generic image for table
Table II.

Diode parameters calculated from the Poole–Frenkel plot in Fig. 3(C).

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/content/aip/journal/jap/106/6/10.1063/1.3225909
2009-09-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of thick film poly(triarylamine) semiconductor diodes for direct x-ray detection
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3225909
10.1063/1.3225909
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