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High antimony content type-II “W” structure for long wavelength emission
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10.1063/1.3226000
/content/aip/journal/jap/106/6/10.1063/1.3226000
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3226000

Figures

Image of FIG. 1.
FIG. 1.

TEM image of type-II “W” structure. The 7.5 nm layer contains . These active regions are separated by GaAs spacers. The roughened interfaces and perhaps the compositional variation lead to the mottled regions in the active regions of the device.

Image of FIG. 2.
FIG. 2.

The HRXRD scan obtained from a SL sample grown at As/III and Sb/III precursor ratios of 3 and 4, respectively, and at a temperature of . The dynamic simulation obtains a Sb composition of and a period thickness of 12.2: 4 nm , 8 nm GaAs, and a 0.2 nm intermediate layer at the interface.

Image of FIG. 3.
FIG. 3.

The HRXRD scan obtained from the SL sample after the annealing. The sample was grown at As/III and Sb/III precursor ratios of 3 and 4, respectively, and at a temperature of . The dynamic simulation indicates intermixing at and interfaces. The intermixed layer has a thickness of 0.35 nm at both the interfaces.

Image of FIG. 4.
FIG. 4.

The PL spectra obtained from the SL sample. The postannealing PL intensity drastically decreases presumably due to intermixing at the and interfaces. A blueshift in the emission wavelength has been observed after annealing. The spectra have been intentionally offset for clarity.

Image of FIG. 5.
FIG. 5.

Temperature dependent PL spectra from the SL sample. A room temperature PL has been observed; however, the PL intensity decreases rapidly beyond 150 K. The spectra have been intentionally offset for clarity on this log plot.

Image of FIG. 6.
FIG. 6.

The HRXRD scan obtained from a SL sample grown at As/III and N/III precursor ratios of 70 and 170, respectively, and at a temperature of . The dynamic simulation obtains a N composition of and a period thickness of 12 nm (4 nm and 8 nm GaAs).

Image of FIG. 7.
FIG. 7.

PL spectra from the SL sample. The high density of band tail states in the as-grown sample leads to a broad peak at long wavelength (1060 nm). The postgrowth annealing employed here significantly reduces the density of the band tail states and increases the PL peak intensity from the SL. The spectra have been intentionally offset for clarity.

Image of FIG. 8.
FIG. 8.

Temperature dependent PL spectra from the SL sample after the annealing. The PL intensity drops down rapidly with increasing temperature. Room temperature emission can only be observed from this sample after the annealing. The spectra have been intentionally offset for clarity on this log plot.

Image of FIG. 9.
FIG. 9.

The HRXRD scan obtained from a sample grown at a temperature of . The dynamic simulation obtains N and Sb compositions of and , respectively, and a period thickness of 7 nm (4 nm and 3 nm )

Image of FIG. 10.
FIG. 10.

30 K PL spectra obtained from the sample (4 nm and 3 nm ) before and after the annealing. The SL peak intensity increases and the peak exhibits a blueshift in the emission wavelength post annealing. The spectra have been intentionally offset for clarity.

Image of FIG. 11.
FIG. 11.

30 K PL spectra obtained from the sample (4 nm and 3 nm ) before and after the annealing. The W structure peak intensity increases and the peak exhibits a blueshift in the emission wavelength post annealing. The spectra have been intentionally offset for clarity.

Image of FIG. 12.
FIG. 12.

Temperature dependent PL spectra obtained from the sample (4 nm and 3 nm ) after the annealing. The W structure peak intensity decreases with the measurement temperature. The spectra have been intentionally offset for clarity on this log plot.

Tables

Generic image for table
Table I.

A data summary of SL samples grown under different experimental conditions. The range of interest for antimony composition in the SL samples is 30% or higher for long wavelength application. The PL data were only obtained from the pseudomorphic SL samples with .

Generic image for table
Table II.

A summary of SL HRXRD and PL data. The growths were performed at a constant As/III precursor ratio of 70 and at a constant temperature of . PL data were obtained from samples with low nitrogen concentration, a range of interest for heterostructures.

Generic image for table
Table III.

The thicknesses of the and layers in the grown SL and “W” structures. The and indicate SL and “W” structure samples, respectively.

Generic image for table
Table IV.

A summary of 30 K PL results from the SL and “W” structure samples before and after the annealing. The experimental results were compared with the model predictions. The error bars on the simulated emission wavelength were estimated by varying the antimony and nitrogen mole fraction by ±0.5 and ±0.05, respectively. The estimated measurement error on the PL data is ±2 nm.

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/content/aip/journal/jap/106/6/10.1063/1.3226000
2009-09-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High antimony content GaAs1−zNz–GaAs1−ySby type-II “W” structure for long wavelength emission
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/6/10.1063/1.3226000
10.1063/1.3226000
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