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Defect structure of Ge(111)/cubic heterostructures: Thickness and annealing dependence
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View: Figures


Image of FIG. 1.
FIG. 1.

TEM cross-sections of the Ge(111)/cub- heterostructure. (a) Overview of a thick Ge(111) epilayer; (b) Ge(111) epilayer; (c) type-A/B/A stacking configuration; (d) type-B rotation twin at the Ge/buffer interface; (e) microtwin ending at the epi-Ge surface; (f) stacking faults. Viewing direction is for (b) and for (a) and (c)–(f).

Image of FIG. 2.
FIG. 2.

(a) Si(111) pole figure of a blanket Si(111) wafer; (b) cub- pole figure of a cub- system; (c) Ge(111) pole figure of a Ge(111)/ cub- heterostructure; (d) labeling of the pole figure diffraction signals in (c) ( spots in black, spots in red, spots in blue, in magenta; , 1, 2, 3). Pole figure intensities in logarithmic scale.

Image of FIG. 3.
FIG. 3.

High-resolution scans at specific spots of the pole figure, namely, at (a) (solid black line) and (dotted red line); (b) one spot (solid blue line) and one spot (dotted magenta line). Intensities in logarithmic scale.

Image of FIG. 4.
FIG. 4.

RSM at the spot of the pole figure shown in Fig. 2(c) for . Dashed double dotted line represents the direction.

Image of FIG. 5.
FIG. 5.

(a) Percentage of type-B oriented Ge in the type-A Ge matrix and (b) microtwin intensity vs Ge film thickness , before (black dots) and after annealing (red triangles).

Image of FIG. 6.
FIG. 6.

(a) Radial scans across the Ge(111) Bragg peak along before/after PDA (solid black line/dotted red line, respectively) and along before/after PDA (black dots/red triangles, respectively). (b) Intensity difference between the scan along and the scan along for the as-deposited (black dots) and annealed (red triangles) sample.

Image of FIG. 7.
FIG. 7.

Experimentally determined Ge lattice constant as a function of the polar angle for as-deposited (black dots) and annealed (red triangles) thick Ge film. Ge bulk lattice constant (0.5657 nm) highlighted in blue.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependence