TEM cross-sections of the Ge(111)/cub- heterostructure. (a) Overview of a thick Ge(111) epilayer; (b) Ge(111) epilayer; (c) type-A/B/A stacking configuration; (d) type-B rotation twin at the Ge/buffer interface; (e) microtwin ending at the epi-Ge surface; (f) stacking faults. Viewing direction is for (b) and for (a) and (c)–(f).
(a) Si(111) pole figure of a blanket Si(111) wafer; (b) cub- pole figure of a cub- system; (c) Ge(111) pole figure of a Ge(111)/ cub- heterostructure; (d) labeling of the pole figure diffraction signals in (c) ( spots in black, spots in red, spots in blue, in magenta; , 1, 2, 3). Pole figure intensities in logarithmic scale.
High-resolution scans at specific spots of the pole figure, namely, at (a) (solid black line) and (dotted red line); (b) one spot (solid blue line) and one spot (dotted magenta line). Intensities in logarithmic scale.
RSM at the spot of the pole figure shown in Fig. 2(c) for . Dashed double dotted line represents the direction.
(a) Percentage of type-B oriented Ge in the type-A Ge matrix and (b) microtwin intensity vs Ge film thickness , before (black dots) and after annealing (red triangles).
(a) Radial scans across the Ge(111) Bragg peak along before/after PDA (solid black line/dotted red line, respectively) and along before/after PDA (black dots/red triangles, respectively). (b) Intensity difference between the scan along and the scan along for the as-deposited (black dots) and annealed (red triangles) sample.
Experimentally determined Ge lattice constant as a function of the polar angle for as-deposited (black dots) and annealed (red triangles) thick Ge film. Ge bulk lattice constant (0.5657 nm) highlighted in blue.
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