1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Strain-induced variations of electronic energy band edges of embedded semiconductor quantum dots in half-space substrates
Rent:
Rent this article for
USD
10.1063/1.3234383
/content/aip/journal/jap/106/7/10.1063/1.3234383
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3234383
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of InAs QDs in GaAs substrates: cubic QD in (a) and pyramid QD in (b). Both QDs have the same distance between the body center and the surface of half plane: ; strain and band edge results are along the dashed-dotted lines and the -axis.

Image of FIG. 2.
FIG. 2.

Strain components [(a) and (c)] and band edges [(b) and (d)] in a cubic InAs/GaAs QD along the bottom center line of the QD [(a) and (b)] in (001) substrate and [(c) and (d)] in (111) substrate.

Image of FIG. 3.
FIG. 3.

Strain components [(a) and (c)] and band edges [(b) and (d)] in a cubic InAs/GaAs QD along the -axis of the QD [(a) and (b)] in (001) substrate and [(c) and (d)] in (111) substrate.

Image of FIG. 4.
FIG. 4.

Strain components [(a) and (c)] and band edges [(b) and (d)] in a cubic InAs/GaAs QD along the specified vertical line of the QD [(a) and (b)] in (001) substrate and [(c) and (d)] in (111) substrate.

Image of FIG. 5.
FIG. 5.

Strain components [(a) and (c)] and band edges [(b) and (d)] in a pyramidal InAs/GaAs QD along the bottom center line of the QD [(a) and (b)] in (001) substrate and [(c) and (d)] in (111) substrate.

Image of FIG. 6.
FIG. 6.

Strain components [(a) and (c)] and band edges [(b) and (d)] in a pyramidal InAs/GaAs QD along the -axis of the QD [(a) and (b)] in (001) substrate and [(c) and (d)] in (111) substrate.

Image of FIG. 7.
FIG. 7.

Strain components [(a) and (c)] and band edges [(b) and (d)] in a pyramidal InAs/GaAs QD along the specified vertical line of the QD [(a) and (b)] in (001) substrate and [(c) and (d)] in (111) substrate.

Image of FIG. 8.
FIG. 8.

Relative error (%) of the band edge calculations based on the approximate method as compared to the present exact method in an InAs/GaAs cubic QD embedded in GaAs (001) and (111) substrates: results along the bottom center line of the QD in (a) and along the -axis of the QD in (b).

Image of FIG. 9.
FIG. 9.

Band edges in a cubic QD embedded at different depths within the GaAs half-space substrate and in the infinite-space substrate along the bottom center line of the QD: (a), (b), and (c) refer to the HH, LH, and SO bands, respectively.

Image of FIG. 10.
FIG. 10.

Band edges in a cubic QD embedded at different depths within the GaAs half-space substrate and in the infinite-space substrate along the -axis of the QD: (a), (b), and (c) refer to the HH, LH, and SO bands, respectively.

Image of FIG. 11.
FIG. 11.

Comparison of bandgap energies between the experimental results and present calculations for InAs QDs within substrates (the calculations are based on both the exact and approximate methods).

Loading

Article metrics loading...

/content/aip/journal/jap/106/7/10.1063/1.3234383
2009-10-07
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-induced variations of electronic energy band edges of embedded semiconductor quantum dots in half-space substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3234383
10.1063/1.3234383
SEARCH_EXPAND_ITEM