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Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory
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10.1063/1.3236632
/content/aip/journal/jap/106/7/10.1063/1.3236632
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3236632
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical characteristics of the Si resistive memory in linear scale. The voltage is swept in the direction as follows: . The upper inset is the asymmetrical curve at the LRS of the resistive memory in semilog scale, which shows a self-rectifying characteristic. The lower inset shows the endurance performance of the resistive memory at the LRS.

Image of FIG. 2.
FIG. 2.

Different rectifying effect in characteristics at the LRS with various top electrodes (, Au, and Pt).

Image of FIG. 3.
FIG. 3.

Forward curve fitting of the top Au electrode sample. Three regions corresponding to Ohmic conduction (region with slope ), injection-limited conduction (region with ), and space-charge-limited model (region with ) can be distinguished before the reset procedure.

Image of FIG. 4.
FIG. 4.

Reverse curves in a double logarithmic scale of the top Au electrode resistive device measured at temperatures ranging from 180 to 390 K. The inset shows the relationship between the reverse injection current and , which follows the Arrhenius’ law. In the low bias region, the reverse current is strongly dependent on the temperature, while the current becomes almost temperature independent for high bias region.

Image of FIG. 5.
FIG. 5.

Device area dependence of the on state current of the top Au electrode samples.

Image of FIG. 6.
FIG. 6.

curves after the resistive memory sample is set to LRS. curves of part 1 and part 2 are measured after cutting the top Au electrode into two equal halves, showing that the resistive switching is localized to part 1.

Image of FIG. 7.
FIG. 7.

Schematic diagram of conducting filament-alike path formation in the Si resistive memory device. The resistive sample is at the pristine state (a) and at LRS after switching on (b).

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/content/aip/journal/jap/106/7/10.1063/1.3236632
2009-10-15
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3236632
10.1063/1.3236632
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