Typical characteristics of the Si resistive memory in linear scale. The voltage is swept in the direction as follows: . The upper inset is the asymmetrical curve at the LRS of the resistive memory in semilog scale, which shows a self-rectifying characteristic. The lower inset shows the endurance performance of the resistive memory at the LRS.
Different rectifying effect in characteristics at the LRS with various top electrodes (, Au, and Pt).
Forward curve fitting of the top Au electrode sample. Three regions corresponding to Ohmic conduction (region with slope ), injection-limited conduction (region with ), and space-charge-limited model (region with ) can be distinguished before the reset procedure.
Reverse curves in a double logarithmic scale of the top Au electrode resistive device measured at temperatures ranging from 180 to 390 K. The inset shows the relationship between the reverse injection current and , which follows the Arrhenius’ law. In the low bias region, the reverse current is strongly dependent on the temperature, while the current becomes almost temperature independent for high bias region.
Device area dependence of the on state current of the top Au electrode samples.
curves after the resistive memory sample is set to LRS. curves of part 1 and part 2 are measured after cutting the top Au electrode into two equal halves, showing that the resistive switching is localized to part 1.
Schematic diagram of conducting filament-alike path formation in the Si resistive memory device. The resistive sample is at the pristine state (a) and at LRS after switching on (b).
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