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Temperature dependence of current-voltage characteristics in highly doped Ag/-GaN/In Schottky diodes
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10.1063/1.3236647
/content/aip/journal/jap/106/7/10.1063/1.3236647
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3236647

Figures

Image of FIG. 1.
FIG. 1.

Semilog forward bias characteristics for Ag/-GaN/In SD in the temperature range of 80–360 K.

Image of FIG. 2.
FIG. 2.

Barrier height vs temperature plot for the Ag/-GaN/In SD in the temperature range of 80–360 K.

Image of FIG. 3.
FIG. 3.

Ideality factor vs temperature plot for Ag/-GaN/In SD in the temperature range of 80–360 K.

Image of FIG. 4.
FIG. 4.

vs plot for Ag/-GaN/In SD in the temperature range of 80–360 K.

Image of FIG. 5.
FIG. 5.

Semilog reverse bias characteristics for Ag/-GaN/In SD in the temperature range of 80–360 K.

Image of FIG. 6.
FIG. 6.

Semilogarithmic vs plot from the data in Fig. 5 for Ag/-GaN SD in the temperature range of 80–360 K.

Tables

Generic image for table
Table I.

Experimental values obtained from the forward bias characteristics for the Ag/-GaN/In SD.

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/content/aip/journal/jap/106/7/10.1063/1.3236647
2009-10-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3236647
10.1063/1.3236647
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