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1.T. Minami, MRS Bull. 25, 33 (2000).
2.Y. Ohya, T. Niwa, T. Ban, and Y. Takahashi, Jpn. J. Appl. Phys., Part 1 40, 297 (2001).
3.R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003).
4.P. F. Carcia, R. S. Mclean, M. H. Reilly, and G. Nunes, Jr., Appl. Phys. Lett. 82, 1117 (2003).
5.E. Fortunato, A. Pimentel, L. Pereira, A. Goncalves, G. Lavareda, H. Aguas, I. Ferreira, C. N. Caralho, and R. Martins, J. Non-Cryst. Solids 338–340, 806 (2004).
6.T. Hirao, M. Furuta, H. Furuta, T. Matsuda, T. Hiramatsu, H. Hokari, and M. Yoshida, SID 06 Digest, 2006, pp. 1820.
7.T. Hirao, M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, H. Hokari, M. Yoshida, H. Ishii, and M. Kakegawa, IEEE Trans. Electron Devices 55, 3136 (2008).
8.F. Hossain, J. Nishii, S. Takagi, A. Ohtomo, T. Fukumura, H. Fujioka, H. Koinuma, and M. Kawasaki, J. Appl. Phys. 94, 7768 (2003).
9.H. Hosono, N. Kikuchi, N. Ueda, and H. Kawazoe, J. Non-Cryst. Solids 198–200, 165 (1996).
10.K. Nomura, H. Ohta, A. Takagl, T. Kamiya, M. Hirani, and H. Hosono, Nature (London) 432, 488 (2004).
11.J. Lee, D. Kim, D. Yang, S. Hong, K. Yoon, P. Hong, C. Jeong, H. Park, S. Kim, S. Y. Kim, S. K. Lim, and S. S. Kim, SID 08 Digest, 2008, pp. 626628.
12.K. Son, T. Kim, J. Jung, M. Ryu, K. Park, B. Yoo, J. Kim, Y. Lee, J. Kwon, S. Lee, and J. Kim, SID 08 Digest, 2008, pp. 433636.
13.H. Q. Chiang and J. F. Wager, Appl. Phys. Lett. 86, 013503 (2005).
14.W. B. Jackson, R. L. Hoffman, and G. S. Herman, Appl. Phys. Lett. 87, 193503 (2005).
15.M. Futsuhara, K. Yoshioka, and O. Takai, Thin Solid Films 317, 322 (1998).
16.J. M. Bian, X. M. Li, X. D. Gao, W. D. Yu, and L. D. Chen, Appl. Phys. Lett. 84, 541 (2004).
17.J. G. Ma, Y. C. Lui, R. Mu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, J. Vac. Sci. Technol. B 22, 94 (2004).
18.E. Kaminska, A. Poitrowska, J. Kossut, A. Barcz, R. Butkute, W. Dobrowolski, E. Dynowska, R. Jakiela, E. Przezdziecka, R. Lukasiewicz, M. Aleszkiewicz, P. Wojnar, and E. Kowalczyk, Solid State Commun. 135, 11 (2005).
19.M. L. Tu, Y. K. Su, and C. Y. Ma, J. Appl. Phys. 100, 053705 (2006).
20.B. Yao, D. Z. Shen, Z. Z. Zhang, X. H. Wang, Z. P. Wei, B. H. Li, Y. M. Lv, X. W. Fan, L. X. Guan, G. Z. Xing, C. X. Cong, and Y. P. Xie, J. Appl. Phys. 99, 123510 (2006).
21.D. Klaitabtim, S. Pratontep, and J. Nukeaw, Jpn. J. Appl. Phys., Part 1 47, 653 (2008).
22.JCPDS Card No. 35-0762.
23.JCPDS Card No. 36-1451.
24.Y. F. Yan, S. B. Zhang, and S. T. Pantelides, Phys. Rev. Lett. 86, 5723 (2001).
25.K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, and H. Hosono, Appl. Phys. Lett. 85, 1993 (2004).
26.F. Zong, H. Ma, C. Xue, H. Zhuang, X. Zhang, H. Xiao, J. Ma, and F. Ji, Solid State Commun. 132, 521 (2004).
27.M. Futsuhara, K. Yoshioka, and O. Takai, Thin Solid Films 322, 274 (1998).
28.K. Toyoura, H. Tsujimura, T. Goto, K. Hachiya, R. Hagiwara, and Y. Ito, Thin Solid Films 492, 88 (2005).
29.EAG’s report of XPS/ESCA analysis to AKT (2007).

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Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, for the as-deposited film produced at and after annealing at . In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium–gallium–zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd