characteristics measured for MOCVD grown -GaN sample 1 (solid lines) and 25% Al -AlGaN sample 3 (dashed lines) at 85, 290, and 400 K.
Temperature dependence of measured for MOCVD grown -GaN sample 1 at frequencies , 500, 1000, 2000, 3000, 5000, 10000, 20000, 30000, 50000, 100000, 200000, 300000, 500000, and 1000000 Hz.
Temperature dependence of for the LT (closed symbols) and HT (open symbols) peaks in the admittance spectra from MOCVD grown -GaN, -AlGaN (10% Al), and -AlGaN (25% Al) samples 1–3; , and corresponds to the temperature of the peak in or ac conductance spectrum taken at frequency .
Composition dependence of the activation energy for the LT and HT peaks in admittance spectra for MOCVD and MBE -AlGaN.
Temperature dependence of capacitance and ac conductance for the MBE -GaN 4; measurement frequencies , 50, 70, 100, 200, 300, 500, 700, 1000, and 2000 Hz; is divided by the circular frequency to bring all amplitudes for each set of peaks to the same value.
The temperature dependence of for the LT (closed symbols) and HT (open symbols) peaks in the admittance spectra measured for the MBE -GaN sample 4, normal -AlGaN (45% Al) 7, and anomalous -AlGaN (45% Al) 8; , and corresponds to the temperature of the peak in or ac conductance spectrum taken at frequency .
90 K MCL spectra for the MOCVD (solid line) and MBE (dashed line) -GaN at an accelerating voltage of 7 kV.
90 K MCL spectra of the normal (dashed line) and anomalous (dash-dotted line) MBE -AlGaN (15% Al) samples 5 and 6; also shown is the spectrum for the normal 45% Al sample 7 (solid line).
PICTS spectra from MOCVD 10% Al and 25% Al -AlGaN samples 2 and 3; reverse voltage of , illumination with deuterium UV lamp (pulse length of 5 s), and time windows of 100 ms/1000 ms.
CDLTS spectra from normal MBE 15% Al and 45% Al -AlGaN samples 5 and 7; reverse bias of , forward bias pulse of −2 V, pulse length of 5 s, and time windows of 100 ms/1000 ms.
Structure and electrical properties of -AlGaN samples.
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