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Comparison of electrical properties and deep traps in grown by molecular beam epitaxy and metal organic chemical vapor deposition
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10.1063/1.3238508
/content/aip/journal/jap/106/7/10.1063/1.3238508
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3238508

Figures

Image of FIG. 1.
FIG. 1.

characteristics measured for MOCVD grown -GaN sample 1 (solid lines) and 25% Al -AlGaN sample 3 (dashed lines) at 85, 290, and 400 K.

Image of FIG. 2.
FIG. 2.

Temperature dependence of measured for MOCVD grown -GaN sample 1 at frequencies , 500, 1000, 2000, 3000, 5000, 10000, 20000, 30000, 50000, 100000, 200000, 300000, 500000, and 1000000 Hz.

Image of FIG. 3.
FIG. 3.

Temperature dependence of for the LT (closed symbols) and HT (open symbols) peaks in the admittance spectra from MOCVD grown -GaN, -AlGaN (10% Al), and -AlGaN (25% Al) samples 1–3; , and corresponds to the temperature of the peak in or ac conductance spectrum taken at frequency .

Image of FIG. 4.
FIG. 4.

Composition dependence of the activation energy for the LT and HT peaks in admittance spectra for MOCVD and MBE -AlGaN.

Image of FIG. 5.
FIG. 5.

Temperature dependence of capacitance and ac conductance for the MBE -GaN 4; measurement frequencies , 50, 70, 100, 200, 300, 500, 700, 1000, and 2000 Hz; is divided by the circular frequency to bring all amplitudes for each set of peaks to the same value.

Image of FIG. 6.
FIG. 6.

The temperature dependence of for the LT (closed symbols) and HT (open symbols) peaks in the admittance spectra measured for the MBE -GaN sample 4, normal -AlGaN (45% Al) 7, and anomalous -AlGaN (45% Al) 8; , and corresponds to the temperature of the peak in or ac conductance spectrum taken at frequency .

Image of FIG. 7.
FIG. 7.

90 K MCL spectra for the MOCVD (solid line) and MBE (dashed line) -GaN at an accelerating voltage of 7 kV.

Image of FIG. 8.
FIG. 8.

90 K MCL spectra of the normal (dashed line) and anomalous (dash-dotted line) MBE -AlGaN (15% Al) samples 5 and 6; also shown is the spectrum for the normal 45% Al sample 7 (solid line).

Image of FIG. 9.
FIG. 9.

PICTS spectra from MOCVD 10% Al and 25% Al -AlGaN samples 2 and 3; reverse voltage of , illumination with deuterium UV lamp (pulse length of 5 s), and time windows of 100 ms/1000 ms.

Image of FIG. 10.
FIG. 10.

CDLTS spectra from normal MBE 15% Al and 45% Al -AlGaN samples 5 and 7; reverse bias of , forward bias pulse of −2 V, pulse length of 5 s, and time windows of 100 ms/1000 ms.

Tables

Generic image for table
Table I.

Structure and electrical properties of -AlGaN samples.

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/content/aip/journal/jap/106/7/10.1063/1.3238508
2009-10-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3238508
10.1063/1.3238508
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