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Optimization of a gas discharge plasma source for extreme ultraviolet interference lithography at a wavelength of 11 nm
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10.1063/1.3243287
/content/aip/journal/jap/106/7/10.1063/1.3243287
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3243287
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scheme of the electrode system for the xenon HCT pinch plasma source used in the experiment.

Image of FIG. 2.
FIG. 2.

Typical flat-field emission spectrum for a pure xenon discharge.

Image of FIG. 3.
FIG. 3.

Measured emission spectra of the source with pure xenon plasma (1) and with an admixture of xenon and argon (2).

Image of FIG. 4.
FIG. 4.

Radial profiles of the pinch plasma emission at 10.9 nm for pure xenon plasma (line) and the xenon-argon mixture (dots).

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/content/aip/journal/jap/106/7/10.1063/1.3243287
2009-10-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimization of a gas discharge plasma source for extreme ultraviolet interference lithography at a wavelength of 11 nm
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/7/10.1063/1.3243287
10.1063/1.3243287
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