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Compact model for forward subthreshold characteristics in polymer semiconductor transistors
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10.1063/1.3233927
/content/aip/journal/jap/106/8/10.1063/1.3233927
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/8/10.1063/1.3233927
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Illustration of the band bending in the polymer semiconductor field effect transistor. The surface potential is . (b) Effective capacitance of the transistor.

Image of FIG. 2.
FIG. 2.

Application of the model of Eq. (4) to amorphous silicon. The points are the subthreshold current-voltage characteristics of amorphous silicon, while the bold lines are the model. Parameters and extracted from the intercept and slope of the plot of vs are 0.01 nA and , respectively.

Image of FIG. 3.
FIG. 3.

(a) Transfer and (b) output characteristics of PBTTT semiconductor based polymer TFTs. (c) Application of the model of Eq. (4) to PBTTT semiconductor based polymer TFTs. The points with dotted lines are the subthreshold transfer characteristic at , while the bold line is the model. We see that the model is not sufficient since it does not predict the nonexponential dependence of the subthreshold slope on .

Image of FIG. 4.
FIG. 4.

Application of the model of Eq. (9) with the modification to shape of deep states to PBTTT semiconductor based polymer TFTs. The points are the subthreshold current-voltage characteristics of the PBTTT transistor in Fig. 4, while the bold line is the model. Parameters and are extracted to be 0.3 nA and , respectively. The fitting parameter ϵ = 0.1. We see that the model is a good fit to the data, except when in the output characteristics where the TFT is out of the subthreshold operation.

Image of FIG. 5.
FIG. 5.

Current-voltage characteristics of thick PQT semiconductor based polymer TFTs. The current-voltage characteristics have lost saturation due to Poole–Frenkel-type conduction mechanism (SCLC and hopping) in the thick semiconductor. The model of Eq. (9) with the modification to shape of deep states is not sufficient to predict this behavior.

Image of FIG. 6.
FIG. 6.

A current corresponding to the applied voltage flows through semiconductor deposited between coplanar contacts separated by 4 μm. (a) The parameter is the slope of the plot of vs at low voltages. Prominent Poole–Frenkel behavior is seen in the plot of vs with the slope at high being parameter α corresponding to 4 μm contact separation . (b) The parameter is about . From this, the parameter α corresponding to a contact separation of 50 μm, , is estimated using the relation .

Image of FIG. 7.
FIG. 7.

Application of the model of Eq. (11) with the modification to shape of deep states and addition of Poole Frenkel components to the data of Fig. 6. Parameters , , α, and are extracted to be 4.5 nA, , , and 0.2 nA∕V, respectively. The fitting parameter ϵ = −0.04.

Image of FIG. 8.
FIG. 8.

Graphical solution to Eq. (A3). Along the -axis is plotted the LHS and RHS of Eq. (A3) as a function of the unknown variable , which is plotted on the -axis. The LHS is the line with slope and -axis intercept . The RHS is the function , where . The solution to the equation is the intersection of the two plots. To derive , we study the effect of a small change in on .

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/content/aip/journal/jap/106/8/10.1063/1.3233927
2009-10-19
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compact model for forward subthreshold characteristics in polymer semiconductor transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/8/10.1063/1.3233927
10.1063/1.3233927
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