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Coherent optical control of the ultrafast dephasing and mobility in a polar semiconductor
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10.1063/1.3243342
/content/aip/journal/jap/106/8/10.1063/1.3243342
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/8/10.1063/1.3243342
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) LOPC modes ( and in red lines) for . Bare phonon (LO) and plasmon (PL) are in black lines. (b) Transient electro-optic response for the reflectivity change, i.e., , where is simply taken for the carrier densities and . (c) Continuous wavelet transformation of in the frequency-time space for and .

Image of FIG. 2.
FIG. 2.

Transient polarizations of bare phonon (LO) and bare plasmon (PL) and lattice-relevant and carrier-relevant LOPC modes with with respect to the carrier densities , , and .

Image of FIG. 3.
FIG. 3.

Relaxation time of mode with respect to values of the mode coupling and the carrier density .

Image of FIG. 4.
FIG. 4.

Comparison of the full many-body time-dependent calculation of with its second order perturbation results. (a) and [(b) and (c)] .

Image of FIG. 5.
FIG. 5.

Excitation of real (left) and virtual (right) electron-hole pair continuum. In contrast to the above-band-gap excitation case, the below-band-gap excitation case does not accumulate carriers (i.e., no photoexcited carrier). The figure is from Ref. 17.

Image of FIG. 6.
FIG. 6.

Upper panel: transient electro-optic responses [ with ] for the pulse train of and . Lower panel: continuous wavelet transformation of in the frequency-time space. The density of doped carriers is and the interval between pulses is , i.e., 61 fs. The detuning is adopted. The applied pulse train is illustrated.

Image of FIG. 7.
FIG. 7.

Continuous wavelet transformation of in the frequency-time space for the pulse train of . with respect to the densities of doped carrier, , 2, and 3 for a fixed pulse interval, . is taken. The applied pulse train is illustrated in each panel.

Image of FIG. 8.
FIG. 8.

Continuous wavelet transformation of in the frequency-time space for the pulse train of . with respect to the intervals between pulses, for a fixed density of doped carrier, . is taken.

Image of FIG. 9.
FIG. 9.

(a) Behaviors of with respect to for the pulse train of . and are taken. (b) Behaviors of and in the simplified two-level problem for (red), 25 meV (blue), and 45 meV (black). and are adopted. The inset is the level schematic. is the ground state. The figure is from Ref. 17.

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/content/aip/journal/jap/106/8/10.1063/1.3243342
2009-10-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coherent optical control of the ultrafast dephasing and mobility in a polar semiconductor
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/8/10.1063/1.3243342
10.1063/1.3243342
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