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Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots
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10.1063/1.3246864
/content/aip/journal/jap/106/8/10.1063/1.3246864
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/8/10.1063/1.3246864

Figures

Image of FIG. 1.
FIG. 1.

The polar reference QD. The growth direction [0001] is highlighted.

Image of FIG. 2.
FIG. 2.

The nonpolar reference QD. The growth direction is highlighted.

Image of FIG. 3.
FIG. 3.

Polarization potential for shear piezoelectric constants in cases A and B for a polar (left) and a nonpolar (right) grown QD.

Image of FIG. 4.
FIG. 4.

Polarization potential for the cases A and B plotted along [0001] direction in a polar (top) and a nonpolar (bottom) grown QD for the original system geometries. The upper and lower edge of the QD are marked with vertical lines. For the polar QD, the [0001] axis crosses the wetting layer (dashed vertical line).

Image of FIG. 5.
FIG. 5.

Charge density of the first three electron and hole states in a polar QD for case A (outer surface: 90%, inner surface: 50%).

Image of FIG. 6.
FIG. 6.

Charge density of the first three electron and hole states in a nonpolar QD for case A (outer surface: 90%, inner surface: 50%).

Image of FIG. 7.
FIG. 7.

Polarization potential in a nonpolar QD plotted along [0001] direction for different cell sizes along growth direction . The piezoelectric constants are those in case A. Vertical lines indicate the QD boundaries.

Image of FIG. 8.
FIG. 8.

Overlap matrix element between electron ground state and the hole states , , and (top) and correspondingly for the hole ground state and the electron states , , and (bottom) as a function of characteristic dimensions of the nonpolar and the polar QD. For the polar QD, the overlap behaves antiproportional to the QD size.

Image of FIG. 9.
FIG. 9.

Second excited electron state for the original nonpolar dot (left) and for a dot with dimensions reduced to 60% of the original size (right).

Tables

Generic image for table
Table I.

Material parameters for wurtzite GaN and AlN. Effective masses, the ’s, , and are taken from Ref. 25. , , and are taken from Ref. 26. All other parameters are taken from Ref. 27.

Generic image for table
Table II.

Overlap between different pairs of electron and hole states for the positive values of (case A, top), and negative (case B, bottom) of a polar QD.

Generic image for table
Table III.

Overlap between different pairs of electron and hole states for the positive values of (case A, top), and negative (case B, bottom) of a nonpolar QD. Note that these elements are four orders of magnitude smaller than those of polar QDs.

Generic image for table
Table IV.

Charge carrier overlap in a nonpolar QD with 60% of its original dimensions.

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/content/aip/journal/jap/106/8/10.1063/1.3246864
2009-10-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/8/10.1063/1.3246864
10.1063/1.3246864
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