X-ray diffraction profiles around (001) and (002) reflections of thin films. Here, only results of five samples are shown for simplicity.
curves in varied external magnetic fields: (a) an unirradiated film (UNIRR); (b) the film irradiated at (IRR4). The magnetic field direction is perpendicular to the film surface .
Upper critical field as a function of temperature for unirradiated and selected irradiated films with magnetic fields applied parallel (upper panel, empty symbols) and perpendicular (lower panel, full symbols) to the film surfaces.
Variation in with for the measured film series with magnetic fields applied perpendicular (full symbols) and parallel (empty symbols) to the film surface. Anisotropy of the upper critical field at as a function of is plotted in the inset.
Temperature dependence of the upper critical field anisotropy parameter for selected films derived from the data presented in Fig. 2.
Raman spectra of films irradiated with different fluences.
The mode peak position as a function of ion fluence for unirradiated and selected irradiated films. The inset shows the FWHM as a function of the corresponding ion fluence.
Parameters of films irradiated with different ion fluences: (defined as the midpoint of the superconducting transition), residual resistivity and (defined as the resistivity just above (41 K here) and its change from that to 300 K), lattice parameter , and and , which are the extrapolations at zero temperature of the upper critical field for the fields applied parallel and perpendicular to the film surface.
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