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A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques
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10.1063/1.3257265
/content/aip/journal/jap/106/9/10.1063/1.3257265
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/9/10.1063/1.3257265
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron microscopy images; (a) trenches prior to germanium growth, (b) sample A blanket growth of 700 nm Ge on Si, (c) sample B Ge grown in 200 nm wide trenches, and out to coalesce and form a contiguous layer, sample was polished with CMP, (d) sample C grown as sample B and polished with CMP so that the Ge was coplanar with the top of the , (e) sample D similar to sample B but growth process was optimized for growth selectivity and rapid lateral growth rate, and (f) sample E Ge was grown in 200 nm wide trenches spaced 20 mm apart and laterally along the with a growth process identical to sample D.

Image of FIG. 2.
FIG. 2.

Specular XRD scans of sample A and samples B and C at with the Si 400 reflection peak at and the Ge 400 reflection near . The curves are shifted by one order of magnitude to each other to improve the visibility.

Image of FIG. 3.
FIG. 3.

Simulation of the lateral stress (top) and of the vertical stress (bottom) in sample B after cooling down from Ge growth to room temperature; stress given in .

Image of FIG. 4.
FIG. 4.

Reciprocal space maps measured near the 400 reciprocal lattice point of sample A (a), sample B at (b) and (c), and sample C at (d) and (e); and the asymmetric 311 reflection of sample C at (in low resolution mode). The logarithmic intensity scale covers the range from 1 to with four contours per decade.

Image of FIG. 5.
FIG. 5.

XTEM of sample B showing stacking fault formation originating at the top of the . The stacking faults form when the germanium films coalesce from adjacent trenches.

Image of FIG. 6.
FIG. 6.

Reciprocal space maps measured near the 400 reciprocal lattice point of sample D at (a) and (b). The logarithmic intensity scale covers the range from 1 to with four contours per decade.

Image of FIG. 7.
FIG. 7.

Measurement of the netplane tilt as a function of the incident beam direction ; (a) sample A, tilt of Si and Ge 100 netplanes relative to the wafer surface; (b) analog for sample B, where the Ge in the trenches and of the top layer is considered separately; and (c) calculated tilt of the Ge netplanes relative to the Si substrate of sample B. The vertical lines in [(a) and (b)] mark the tilt direction for the Si substrate relative to the wafer surface, and in (c) for the tilt relative to the Si substrate.

Image of FIG. 8.
FIG. 8.

(a) Specular XRD scans of sample E measured at and ; (b) Θ scans over the Ge 400 reflection at for both directions.

Image of FIG. 9.
FIG. 9.

Reciprocal space maps measured near the 400 reciprocal lattice point of sample E at (a) and (b). High-resolution mapping of the Ge 400 reciprocal lattice point in angular coordinates of the same sample at (c) and (d) for better demonstration of the Ge layer splitting. The logarithmic intensity scale covers the range from 1 to for [(a) and (b)] and from 1 to for [(c) and (d)] with four contours per decade in each case.

Image of FIG. 10.
FIG. 10.

Measurement of the netplane tilt of sample E as a function of the incident beam direction , (a) relative to the wafer surface and (b) relative to the Si substrate. The vertical line in (a) marks the direction of maximum tilt for the Si substrate relative to the wafer surface, and in (b) for the tilt relative to the Si substrate.

Image of FIG. 11.
FIG. 11.

Lattice constant of Ge calculated from the peak position of reflections with different tilt angle relative to the (100) surface. The top layer is measured at and , the Ge in the trenches at only.

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/content/aip/journal/jap/106/9/10.1063/1.3257265
2009-11-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques
http://aip.metastore.ingenta.com/content/aip/journal/jap/106/9/10.1063/1.3257265
10.1063/1.3257265
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