Series of STM images of the surface after deposition of (a) 0.4, (b) 0.6, (c) 1, and (d) 2 ML Mn at RT.
Series of STM images of the Mn silicide islands formed by annealing the 1 ML Mn-deposited Si(111) surface at (a) 250, (b) 300, (c) 400, (d) 500, (e) 600, and (f) for 5 min. Their scan areas are , , , , , and , respectively. (i)–(m) Line profiles across the typical silicide islands in (a)–(f). (g) 3D images of the large silicide islands in (e). (h) High-resolution STM image of the Si(111) terrace in (f), showing good reconstruction.
Averaged tunneling curves measured on top of the small 3D islands in Fig. 2(b), the tabular islands in Fig. 2(d), and the large 3D islands in Fig. 2(e).
Series of STM images of Mn silicide islands formed by annealing the 1 ML Mn-deposited Si(111) surface at for (a) 7, (b) 15, (c) 25, (d) 40, and (e) 55 min.
Time dependence of the averaged island area in Fig. 4 during ripening at . The linear fit yields , which indicates an attachment/detachment limited growth mechanism (inset).
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