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Enhancement of light emission from silicon nanocrystals by post--annealing process
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View: Figures


Image of FIG. 1.
FIG. 1.

Cross-sectional HRTEM image of the film postannealed for 10 min at in an atmosphere.

Image of FIG. 2.
FIG. 2.

(a) XPS spectra of the postannealed films, the double peaks represent Si 2p binding energy of Si–Si and Si–O bonding in the sample. The spectra were arbitrarily shifted for clarity. (b) Changes in the relative Si-atomic concentration of different Si-phases along the annealing time.

Image of FIG. 3.
FIG. 3.

Changes in the PL spectra of films along the annealing time.

Image of FIG. 4.
FIG. 4.

Current density vs applied voltage of the EL device. Open circles and solid line denote the experimental data and the fitted data, respectively. The experimental data are best fitted by , which is known to be the expression for Fowler–Nordheim tunneling process. The inset shows the cross-sectional diagram of the device.

Image of FIG. 5.
FIG. 5.

(a) Various EL spectra of the film along the forward bias current, postannealed for 30 minutes at in an atmosphere. (b) The integrated EL intensity vs forward bias current.

Image of FIG. 6.
FIG. 6.

Comparison between the PL and EL spectra of the device. The PL spectrum was measured under a laser pump power of 30 mW and the EL spectrum was measured under forward bias condition with a current 200 mA.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of light emission from silicon nanocrystals by post-O2-annealing process