Cross-sectional HRTEM image of the film postannealed for 10 min at in an atmosphere.
(a) XPS spectra of the postannealed films, the double peaks represent Si 2p binding energy of Si–Si and Si–O bonding in the sample. The spectra were arbitrarily shifted for clarity. (b) Changes in the relative Si-atomic concentration of different Si-phases along the annealing time.
Changes in the PL spectra of films along the annealing time.
Current density vs applied voltage of the EL device. Open circles and solid line denote the experimental data and the fitted data, respectively. The experimental data are best fitted by , which is known to be the expression for Fowler–Nordheim tunneling process. The inset shows the cross-sectional diagram of the device.
(a) Various EL spectra of the film along the forward bias current, postannealed for 30 minutes at in an atmosphere. (b) The integrated EL intensity vs forward bias current.
Comparison between the PL and EL spectra of the device. The PL spectrum was measured under a laser pump power of 30 mW and the EL spectrum was measured under forward bias condition with a current 200 mA.
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