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Chemical vapor deposition diamond based multilayered radiation detector: Physical analysis of detection properties
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10.1063/1.3275501
/content/aip/journal/jap/107/1/10.1063/1.3275501
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/1/10.1063/1.3275501

Figures

Image of FIG. 1.
FIG. 1.

Structure of the devices.

Image of FIG. 2.
FIG. 2.

Proposed energy band structure at the metal–diamond interface.

Image of FIG. 3.
FIG. 3.

I-V characteristic of the device. Inset: magnified view of the forward voltage region.

Image of FIG. 4.
FIG. 4.

Capacitance vs frequency curves for thee different applied bias voltages.

Image of FIG. 5.
FIG. 5.

(a) C-V and (b) -V characteristics.

Image of FIG. 6.
FIG. 6.

Photocurrent signals as function of time of the diamond device and of the IC at fixed photon energy of 17.5 keV. Inset: enlarged view.

Image of FIG. 7.
FIG. 7.

(a) Photocurrent signal of the diamond detector measure at JET during a rapidly varying plasma emission shot. (b) Enlarged view of the same shot.

Image of FIG. 8.
FIG. 8.

Device linearity as a function of beam intensity at 17.5 KeV: (a) diamond signal vs. calibrated Silicon detector signal; (b) ratio of the diamond to Silicon detectors signal normalized to average value.

Image of FIG. 9.
FIG. 9.

Experimental and calculated responsivity curves of Al_SCD at 0 V (lower curve) and 10 V (upper curve) bias. Dashed lines are simulation curves neglecting secondary electrons effects, continuous lines are Monte Carlo simulations.

Tables

Generic image for table
Table I.

Electrical parameters.

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/content/aip/journal/jap/107/1/10.1063/1.3275501
2010-01-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical vapor deposition diamond based multilayered radiation detector: Physical analysis of detection properties
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/1/10.1063/1.3275501
10.1063/1.3275501
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