Structure of the devices.
Proposed energy band structure at the metal–diamond interface.
I-V characteristic of the device. Inset: magnified view of the forward voltage region.
Capacitance vs frequency curves for thee different applied bias voltages.
(a) C-V and (b) -V characteristics.
Photocurrent signals as function of time of the diamond device and of the IC at fixed photon energy of 17.5 keV. Inset: enlarged view.
(a) Photocurrent signal of the diamond detector measure at JET during a rapidly varying plasma emission shot. (b) Enlarged view of the same shot.
Device linearity as a function of beam intensity at 17.5 KeV: (a) diamond signal vs. calibrated Silicon detector signal; (b) ratio of the diamond to Silicon detectors signal normalized to average value.
Experimental and calculated responsivity curves of Al_SCD at 0 V (lower curve) and 10 V (upper curve) bias. Dashed lines are simulation curves neglecting secondary electrons effects, continuous lines are Monte Carlo simulations.
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