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Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes
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10.1063/1.3276092
/content/aip/journal/jap/107/1/10.1063/1.3276092
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/1/10.1063/1.3276092
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Figures

Image of FIG. 1.
FIG. 1.

HRTEM image of AZO films deposited with Al dc power of 10 W and annealed for 1 min in a ambient.

Image of FIG. 2.
FIG. 2.

Hall measurement results as a function of dc power supplied to the Al target for AZO films annealed at for 1 min in a ambient.

Image of FIG. 3.
FIG. 3.

Optical transmittance spectra of the AZO films deposited on quartz substrates with various Al dc powers and annealed at for 1 min in a ambient.

Image of FIG. 4.
FIG. 4.

Structures of (a) LEDA with the periphery of bonding pad disconnected with AZO film and (b) LEDB with the periphery of bonding pad connected with AZO film.

Image of FIG. 5.
FIG. 5.

The characteristics of (a) LEDA and (b) LEDB.

Image of FIG. 6.
FIG. 6.

The light output characteristics of LEDA.

Image of FIG. 7.
FIG. 7.

The light output characteristics of LEDB.

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/content/aip/journal/jap/107/1/10.1063/1.3276092
2010-01-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/1/10.1063/1.3276092
10.1063/1.3276092
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