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Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes
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10.1063/1.3276156
/content/aip/journal/jap/107/1/10.1063/1.3276156
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/1/10.1063/1.3276156
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical micrograph of the fabricated LEDs with dimensions ranging from 10 to .

Image of FIG. 2.
FIG. 2.

(a) Size-dependent I-V characteristics, (b) J-V plots, and (c) extracted series resistance from I-V curves plotted in (a). The solid line and dashed line are the corresponding fitting curves by using Eqs. (1) and (2).

Image of FIG. 3.
FIG. 3.

(a) Output power as a function of injection current for the different pixel sizes. (b) Power density against current density for different pixel sizes. Inset of (b) shows the power densities in the low current density region. For better illustration of the size-dependent extraction efficiency, only the data of three representative pixels are shown in the inset.

Image of FIG. 4.
FIG. 4.

(a) Current-density-dependent EL characteristics for the . (b) Current-density-dependent EL characteristics for the . (c) EL shift as a function of current density for different pixel sizes. The dotted lines in (a) and (b) are guides to the eyes showing the shift in peak EL wavelength, as determined by fitting Gaussian functions to the experimental spectra to eliminate interference features.

Image of FIG. 5.
FIG. 5.

Measured junction temperature as a function of the current density for different pixel sizes.

Image of FIG. 6.
FIG. 6.

Simulated junction-temperature distribution in the active area of (a) the and (b) under the same current density of [picture sizes are not scaled; in the simulation, the n-contact is fixed at the left side, as indicated by the dashed rectangles in (a) and (b)]. (c) Simulated average junction temperature against current density for two different pixels. Note that in (a) and (b) the absolute temperature variation across the device is 28 times larger for the larger device.

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/content/aip/journal/jap/107/1/10.1063/1.3276156
2010-01-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/1/10.1063/1.3276156
10.1063/1.3276156
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