(a) Temperature dependent PL emission from InAs QDs and (b) from surrounding InGaAs QW.
PL and PLE (dashed line) spectrum of the sample measurement at 10 K. The GS and ES of the bi-QW are marked by a closed square and closed circle, respectively. Inset is the PL from the InGaAs QW. Noticed that the y-ordinate use a logarithmic scale.
PLE spectrum of different In composition in InGaAs QW. Inset is the energy band diagram of the bi-QW concerning the InAs WL and the surrounding InGaAs QW. The GS and ES of the bi-QW are marked by closed squares and closed circles, respectively.
The integrated PL intensity of InAs/InGaAs DWELL structure as a function of temperature and the corresponding fit to one and two carrier escape channel from the Eq. (2).
Temperature dependent PL peak position and FWHM of InAs QDs. Straight line is the InAs band gap shrinkage obtained from Varnish law.
Comparison of the simulated energies for the GS and the ES using eight-band method with the experimentally measured values for two different DWELL samples.
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