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Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy
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10.1063/1.3277049
/content/aip/journal/jap/107/1/10.1063/1.3277049
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/1/10.1063/1.3277049

Figures

Image of FIG. 1.
FIG. 1.

(a) Temperature dependent PL emission from InAs QDs and (b) from surrounding InGaAs QW.

Image of FIG. 2.
FIG. 2.

PL and PLE (dashed line) spectrum of the sample measurement at 10 K. The GS and ES of the bi-QW are marked by a closed square and closed circle, respectively. Inset is the PL from the InGaAs QW. Noticed that the y-ordinate use a logarithmic scale.

Image of FIG. 3.
FIG. 3.

PLE spectrum of different In composition in InGaAs QW. Inset is the energy band diagram of the bi-QW concerning the InAs WL and the surrounding InGaAs QW. The GS and ES of the bi-QW are marked by closed squares and closed circles, respectively.

Image of FIG. 4.
FIG. 4.

The integrated PL intensity of InAs/InGaAs DWELL structure as a function of temperature and the corresponding fit to one and two carrier escape channel from the Eq. (2).

Image of FIG. 5.
FIG. 5.

Temperature dependent PL peak position and FWHM of InAs QDs. Straight line is the InAs band gap shrinkage obtained from Varnish law.

Tables

Generic image for table
Table I.

Comparison of the simulated energies for the GS and the ES using eight-band method with the experimentally measured values for two different DWELL samples.

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/content/aip/journal/jap/107/1/10.1063/1.3277049
2010-01-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/1/10.1063/1.3277049
10.1063/1.3277049
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