(a) HRTEM image and (b) energy dispersive spectrum of the DLC: Fe/Si film.
The curves of (a) DLC: Fe/Si and (b) DLC/Si systems measured in the CPP geometry with a bias voltage of 5 V at different temperatures.
The curves of DLC: Fe/Si systems measured at 290 K in the CPP geometry (a) with the bias voltage around the threshold value. (b) With the bias voltage larger than the threshold value. (c) The relation between the threshold voltage and temperature.
The characteristics of DLC: Fe/Si system measured in the CPP geometry at different temperatures.
Temperature dependence of the resistivity for (a) DLC /Si and (b) DLC: Fe /Si systems at the saturation with bias voltages of 1 mV measured in the CPP geometry
The energy diagram and schematic model of the conversion between and nanoregions, showing the relation between the size of clusters, the field and the voltage drop in the thin film at (a) initial state and (b) an intermediate state at . The balls represent the conductive clusters in the insulating matrix. , , and represent the potential, the average distance between carbon clusters, and the applied electric field, respectively. is the effective diameter of carbon atoms. and are the energy barrier height measured with respect to the and states, respectively. The arrangement of and nanoregions is assumed to be 1D with the size and inter-cluster-distance of the spherical clusters being the same.
The calculated curves of the DLC: Fe/Si system (a) at different temperatures with and (b) at room temperature (300 K) with different voltages. (c) The change of threshold voltage as a function of temperature. We employ the values of the parameters: , , and .
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