characteristics of two junctions with a 100 nm thick aluminum layer. The junctions have been fabricated with an oxygen exposure of (left) and (right) .
Characteristic voltage vs aluminum thickness at . Each data point is an average of several measured junctions from the same chip. The oxygen pressure ranges from 160 to .
Comparison of for the and metal-insulator transition barrier junctions.
Hysteresis of the characteristics vs temperature for a typical SNIS junction. Squares and triangles correspond to two different junctions while the line is a linear fit.
Sketch of a slightly hysteretic SNIS junction integrated with an open-ended transmission line (stub), used to verify the junction capacitance value.
characteristics of the three SNIS junctions in parallel with a resonant structure. The arrows of the insets of junctions Z1 and Z3 indicate the resonances. For junction Z2, the resonances are above the product and are consequently not visible.
Relative frequency shift between simulated and measured resonance frequencies: /measured frequency. Squares, triangles up, diamonds, triangles right, and triangles down: respectively, first, second, third, fourth, and fifth resonance of junction Z1. Open circles: resonance of junction Z3.
Homogeneity of parameters at 4.2 K.
Parameters of junctions under test at 4.2 K.
Article metrics loading...
Full text loading...