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Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated surfaces
4.G. Herranz, M. Basletic, M. Bibes, R. Ranchal, A. Hamzic, E. Tafra, K. Bouzehouane, E. Jacquet, J. P. Contour, A. Barthélémy, and A. Fert, Phys. Rev. B 73, 064403 (2006).
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15.We have observed that the measured parameter mirrors the shape of versus . Thus, the created defects are of vacancy-type.
20.The STO crystal was glued to a watercooled sample holder with a thermally conductive paste (stycast TC4) to ensure a good heat exchange with the thermal bath. Given the flux and energy of the incident ions, the incident power can be estimated as . Assuming that this exchange heat is ideal and the cooled crystal side is kept at constant temperature, and knowing that the STO thermal conductivity at room temperature is ≈ 11 W/mK (Ref. 19), the increase in surface temperature of a -thick STO slab would be ≈ 0.07 K.
, Y. Segal
, F. Walker
, S. Ismail-Beigi
, K. L. Hur
, and C. Ahn
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