Temperature dependence of the sheet resistance and electronic mobility of the ion-etched STO.
SdH oscillations with the field applied in-plane (a) and out-of-plane (b). Inset: FFT power density spectra of the data shown in panel (b).
Cross-sectional resistance mapping using CT-AFM characterization with CrPt-coated tips and the same voltage settings as those used in Ref. 7.
PAS analysis: dependence of the line shape parameter as a function of the incident positron energy (lower abscissa) and the positron mean implantation depth (upper abscissa). The solid lines show the result of the VEPFIT fitting. The inset represents the depth profile of the vacancy defects, extracted from this fitting.
Plot of the normalized distribution of the ions implanted in STO as a function of the depth calculated by the TRIM software and of normalized values of extracted from PAS experiments as a function of the mean positron implantation depth. The values of are proportional to the number of vacancy defects created during the ion etching. Note that the depth of the vacancy defect distribution is around three orders of magnitude higher than distribution of implanted ions.
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