RSMs of around the 224 RLP of sample A (a) and sample C (b). The lines stand for isointensity contours.
(a) Room temperature measured (solid lines) and simulated (circles) normal reflectivities of the epilayers. A spectrum for ZnSe/GaAs sample grown by MBE is presented for comparison and verification of the thickness calculation procedure. Critical points of (ZnSe) are indicated by doted lines (arrows). (b) Dependence of the epilayer thickness with the number of growth cycles.
Micro-Raman spectrum of a 172 nm epilayer grown on GaAs(001) substrate at by ICSS.
Photoluminescence spectrum measured at 4 K of a 172 nm epilayer grown on GaAs(001) substrate at by ICSS. The 325 line of a He-Cd laser was used as excitation source.
Out- and in-plane lattice parameters, molar composition , relaxation factor , and calculated thickness (d) for alloy epilayers grown on GaAs(001) substrate by ICSS.
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