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Growth of epilayers by isothermal closed space sublimation
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10.1063/1.3374706
/content/aip/journal/jap/107/10/10.1063/1.3374706
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/10/10.1063/1.3374706

Figures

Image of FIG. 1.
FIG. 1.

RSMs of around the 224 RLP of sample A (a) and sample C (b). The lines stand for isointensity contours.

Image of FIG. 2.
FIG. 2.

(a) Room temperature measured (solid lines) and simulated (circles) normal reflectivities of the epilayers. A spectrum for ZnSe/GaAs sample grown by MBE is presented for comparison and verification of the thickness calculation procedure. Critical points of (ZnSe) are indicated by doted lines (arrows). (b) Dependence of the epilayer thickness with the number of growth cycles.

Image of FIG. 3.
FIG. 3.

Micro-Raman spectrum of a 172 nm epilayer grown on GaAs(001) substrate at by ICSS.

Image of FIG. 4.
FIG. 4.

Photoluminescence spectrum measured at 4 K of a 172 nm epilayer grown on GaAs(001) substrate at by ICSS. The 325 line of a He-Cd laser was used as excitation source.

Tables

Generic image for table
Table I.

Out- and in-plane lattice parameters, molar composition , relaxation factor , and calculated thickness (d) for alloy epilayers grown on GaAs(001) substrate by ICSS.

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/content/aip/journal/jap/107/10/10.1063/1.3374706
2010-05-20
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of ZnSe(1−x)Tex epilayers by isothermal closed space sublimation
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/10/10.1063/1.3374706
10.1063/1.3374706
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