(a) (004) RCs of the B-implanted and annealed samples (open circles: LF; open diamonds: HF) and (b) (004) RCs of the RT B-implanted and annealed samples (open triangles: LF; stars: HF). The continuous lines are the RCs simulations. Arrows indicated the secondary Bragg peak(s). The RCs were vertically shifted for clarity.
(a) profiles of the B-implanted and annealed samples (continuous line: LF; dashed line: HF) and (b) profiles and of the RT B-implanted and annealed samples (continuous line: LF; dashed line: HF).
B concentration profile obtained by SRIM simulation (dashed line) and profile (continuous line) of the LF implanted and annealed sample. Note the inversion in the orientation of the right y-axis to allow profiles superposition.
of the RT-(circles) and -(triangles) implanted and annealed samples. The continuous line is the data linear fit, while the dashed line is the RT data linear fit. The arrows represent the clustered B strain contribution.
Lattice volume modification for substitutional and clustered B in Si (gray circles) and Ge (black triangles).
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