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Substitutional and clustered B in ion implanted Ge: Strain determination
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10.1063/1.3427563
/content/aip/journal/jap/107/10/10.1063/1.3427563
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/10/10.1063/1.3427563
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) (004) RCs of the B-implanted and annealed samples (open circles: LF; open diamonds: HF) and (b) (004) RCs of the RT B-implanted and annealed samples (open triangles: LF; stars: HF). The continuous lines are the RCs simulations. Arrows indicated the secondary Bragg peak(s). The RCs were vertically shifted for clarity.

Image of FIG. 2.
FIG. 2.

(a) profiles of the B-implanted and annealed samples (continuous line: LF; dashed line: HF) and (b) profiles and of the RT B-implanted and annealed samples (continuous line: LF; dashed line: HF).

Image of FIG. 3.
FIG. 3.

B concentration profile obtained by SRIM simulation (dashed line) and profile (continuous line) of the LF implanted and annealed sample. Note the inversion in the orientation of the right y-axis to allow profiles superposition.

Image of FIG. 4.
FIG. 4.

of the RT-(circles) and -(triangles) implanted and annealed samples. The continuous line is the data linear fit, while the dashed line is the RT data linear fit. The arrows represent the clustered B strain contribution.

Image of FIG. 5.
FIG. 5.

Lattice volume modification for substitutional and clustered B in Si (gray circles) and Ge (black triangles).

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/content/aip/journal/jap/107/10/10.1063/1.3427563
2010-05-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substitutional and clustered B in ion implanted Ge: Strain determination
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/10/10.1063/1.3427563
10.1063/1.3427563
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