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Observation of hole hopping via dopant in -doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices
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10.1063/1.3428374
/content/aip/journal/jap/107/10/10.1063/1.3428374
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/10/10.1063/1.3428374

Figures

Image of FIG. 1.
FIG. 1.

Current characteristics of hole-only devices with structure of -doped film (100 nm, 10 wt %)/Al (solid symbol) or (5 nm)/intrinsic film (100 nm)/Al (empty symbol).

Image of FIG. 2.
FIG. 2.

characteristics of hole-only devices as a function of the doping concentration: (a) -doped TCTA and (b) -doped NPB. Insets in (a) and (b): blowup of the low-voltage range date for the same devices, showing the linear relationship. The conductivity is deduced from this set of data and shown in (c) vs doping level. The dashed line in (c) symbolizes a linear dependence of conductivity on doping level.

Image of FIG. 3.
FIG. 3.

characteristics of (a) hole-only devices with structure of (5 nm)/ or -doped (100 nm)/Al (up) and electron-only devices with structure of Al/LiF (1 nm) or -doped (10)/LiF (1 nm)/Al (bottom). (b) Current-brightness characteristics of device A: (5 nm)/NPB (50 nm)/:C545T (1%, 30 nm)/BCP (10 nm)/Alq: (20 nm)/Al and device B: (10%, 40 nm)/NPB (10 nm)/:C545T (1%, 30 nm)/ (30 nm)/LiF (1 nm)/Al. Inset of (b) is the electroluminescence efficiency of device A and B.

Image of FIG. 4.
FIG. 4.

XPS from (a) (left), (right), and (b) core levels for 20 nm thick undoped or doped films. (c) XPS for -doped or undoped and films. The doped films are 50 wt % content. Spectra are normalized to the same height in order to highlight changes in the line shape. The vertical dashed lines are guide to eye.

Image of FIG. 5.
FIG. 5.

Current-brightness characteristics of hybrid device with structure of (60 nm)/LiF/Al.

Image of FIG. 6.
FIG. 6.

Temperature dependent characteristics of hole-only device with structure of (100 nm, )/Al. (a) 5 wt %, (b) 7.5 wt %, and (c) 10 wt %. The lines are fits to space charge-limited current model with the Poole–Frenkel mobility.

Image of FIG. 7.
FIG. 7.

Performance of OLEDs with or without doped layer as hole injection layer. (a) characteristics. (b) Current efficiency vs current density characteristics, inset of (b): power efficiency vs current density characteristics.

Tables

Generic image for table
Table I.

Transport parameters for -doped films.

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/content/aip/journal/jap/107/10/10.1063/1.3428374
2010-05-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/10/10.1063/1.3428374
10.1063/1.3428374
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