SEM image of a wide junction. In the inset a sketch of the junctions’ structure is shown.
characteristic of wide junctions with various misorientation angles: (a) , (b) , and (c) . All the ’s were measured with no applied magnetic field and at , except (b), which was measured at . Panel (d) shows the linear relation between the switching voltage and the product of representative junctions.
product and values normalized to the maximum value (inset) of submicron junctions as a function of the misorientation angles. The comparison with results on junctions a few microns wide (dashed line in the inset) (Ref. 9) gives a quantitative information on a closer correspondence with the ideal Sigrist–Rice formula for off-axis biepitaxial junctions (solid line).
Three-dimensional plot of an experimental pattern of a junction measured at . The superimposed black line is the Fraunhofer pattern.
characteristic of a wide junction with a misalignment angle , measured at and (black dots). This was recorded with various amplitudes of the current sweep to visualize the intermediate states between 0 and 1 mV and obtain a better resolution of the steps. A simulation made using a two facet configuration, and is also shown (hollow grey dots, red online). For this simulation, the current is normalized to the critical current and the voltage to
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