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Transport and charging mechanisms in thin films for capacitive RF MEMS switches application
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM image of a MIM capacitor. The cross section on a cleaved surface was obtained by using a FIB.

Image of FIG. 2.
FIG. 2.

Typical characteristic at room temperature. An 1-mA value is set as compliance level of the measurement. The inset shows the characteristic at room temperature under reverse applied voltage.

Image of FIG. 3.
FIG. 3.

Arrhenius plot of the conductivity data for at temperatures in the range 300–480 K. The solid line is the least-squared Arrhenius fit to the data for . The inset shows the plot of vs and the least-squared fit (solid line) with Efros VRH law to the conductivity data for .

Image of FIG. 4.
FIG. 4.

Typical plots vs at different temperatures. The straight lines are the least-squared Poole–Frenkel fits to the experimental data.

Image of FIG. 5.
FIG. 5.

Arrhenius plots of the parameters from the Poole–Frenkel fits shown in Fig. 4 . The slope and intercept values are plotted in (a) and (b), respectively.

Image of FIG. 6.
FIG. 6.

Typical current transients during the application of a constant electric field. The solid lines are the fits to the transient data with the Eq. (4) . Dielectric breakdown is observed in the current transient for .

Image of FIG. 7.
FIG. 7.

Electric-field dependence of the parameters from the fits shown in Fig. 6 . and are reported in (a) and (b), respectively.

Image of FIG. 8.
FIG. 8.

Typical capacitance transients at different applied electric fields for -film based MIM capacitors. The increase of the stationary value of the capacitance with the applied field corresponds to the build up of a parallel capacitance of 26 fF and 56 fF for and , respectively. The solid lines are the stretched-exponential fits to the experimental data obtained with the parameters and , respectively, equal to and 0.18 for and and 0.22 for .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application