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Hole transport in the organic small molecule material : evidence for the presence of correlated disorder
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10.1063/1.3407561
/content/aip/journal/jap/107/11/10.1063/1.3407561
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/11/10.1063/1.3407561

Figures

Image of FIG. 1.
FIG. 1.

Chemical structure of the molecule (a) and schematic energy diagram of the glass structures as obtained from this study, indicating the hole injection barriers at the anode and at the cathode , and the HOMO and LUMO energies of (b). The (effective) work functions of ITO and Pd in this system are discussed in the text.

Image of FIG. 2.
FIG. 2.

Experimental current density vs voltage curves for a 100 nm and a 200 nm sample at room temperature (symbols). The data points of the 200 nm device are displaced by in order to prevent overlap with the data points of the 100 nm device. The dashed curves are extrapolated linear fits to the data for . The thick full curves are the experimental data after subtraction of this “leakage” current contribution.

Image of FIG. 3.
FIG. 3.

Measured (symbols) and calculated (curves) curves for a 200 nm hole only device at 297, 273, 254, 232, 213, and 192 K (a) and for a 100 nm device at 295, 272, 255, 233, 215, and 189 K (b), as a function of temperature. The calculations are performed using a drift-diffusion device model, assuming a conventional field-dependence of the mobility, with parameters optimized for the 200 nm device.

Image of FIG. 4.
FIG. 4.

Conventional PF-type mobility model parameters (circles) and (squares) as a function of for the 200 nm device, for which the curves are shown in Fig. 3. The dashed lines are fits using Eqs. (2) and (3).

Image of FIG. 5.
FIG. 5.

Measured (symbols) and calculated (dotted and dashed curves) curves for a 200 nm hole only device (a) and for a 100 nm device (b), as a function of temperature. The calculations are performed assuming a carrier-density and field-dependent mobility following from the GDM (dotted curves) and from the CDM (dashed curves). The relevant parameters are discussed in the text.

Image of FIG. 6.
FIG. 6.

Temperature dependence of the mobility in the zero field and carrier density limit for the GDM and for the CDM . The solid squares (open circles) indicate the values for the 100 (200) nm device.

Tables

Generic image for table
Table I.

Overview of the four GDM and CDM material parameters and of the parameters and , related to the injection barriers, that optimally describe the experimental curves. The relative permittivity of was chosen equal to 3.8.

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/content/aip/journal/jap/107/11/10.1063/1.3407561
2010-06-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole transport in the organic small molecule material α-NPD: evidence for the presence of correlated disorder
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/11/10.1063/1.3407561
10.1063/1.3407561
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