1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Optical gain characteristics of staggered InGaN quantum wells lasers
Rent:
Rent this article for
USD
10.1063/1.3407564
/content/aip/journal/jap/107/11/10.1063/1.3407564
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/11/10.1063/1.3407564

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the (a) conventional QW; (b) two-layer staggered QW; and (c) three-layer staggered QW structures.

Image of FIG. 2.
FIG. 2.

Square of momentum matrix elements as a function of the in-plane wave vector in the TE-polarization for (a) conventional 24-Å QW, (b) two-layer staggered 12-Å QW and (c) three-layer staggered 6-Å QW at carrier density of .

Image of FIG. 3.
FIG. 3.

Optical gain spectra for conventional 24-Å QW, two-layer staggered 12-Å QW and three-layer staggered 6-Å QW emitting at for increasing carrier density .

Image of FIG. 4.
FIG. 4.

Peak optical material gain as a function of carrier density for conventional 24-Å QW, two-layer staggered 12-Å QW and three-layer staggered 6-Å QW at room temperature.

Image of FIG. 5.
FIG. 5.

Peak emission wavelengths from gain spectra as a function of material gains for conventional 24-Å QW, two-layer staggered 12-Å QW and three-layer staggered 6-Å QW.

Image of FIG. 6.
FIG. 6.

Material gain as a function of total current density for conventional 24-Å QW, two-layer staggered 12-Å QW and three-layer staggered 6-Å QW with monomolecular recombination rate of , , and .

Image of FIG. 7.
FIG. 7.

Peak emission wavelength from gain spectra as a function of carrier density for four different conventional 30-Å InGaN QWs with varied In-content of 25%, 30%, 35%, and 40%.

Image of FIG. 8.
FIG. 8.

Optical gain spectra for conventional 30-Å QW with carrier density up to .

Image of FIG. 9.
FIG. 9.

Peak emission wavelength from gain spectra as a function of material gain for four different conventional 30-Å InGaN QWs with varied In-content of 25%, 30%, 35%, and 40%.

Image of FIG. 10.
FIG. 10.

Energy band lineups of (a) 24-Å QW, (b) two-layer staggered 20-Å QW, and (c) three-layer staggered 5-Å QW at carrier density . The calculations are based on a self-consistent 6-band method.

Image of FIG. 11.
FIG. 11.

Spontaneous emission spectra for conventional 30-Å QW, two-layer staggered 20-Å QW and three-layer staggered 5-Å QW for increasing carrier density .

Image of FIG. 12.
FIG. 12.

Spontaneous emission radiative recombination rate as a function of carrier density for conventional 30-Å QW, two-layer staggered 20-Å QW and three-layer staggered 5-Å QW at room temperature.

Image of FIG. 13.
FIG. 13.

Optical gain spectra for conventional 30-Å QW, two-layer staggered 20-Å QW and three-layer staggered 5-Å QW emitting at for increasing carrier density .

Image of FIG. 14.
FIG. 14.

Peak optical gain as a function of carrier density for conventional 30-Å QW, two-layer staggered 20-Å QW and three-layer staggered 5-Å QW at room temperature.

Image of FIG. 15.
FIG. 15.

Peak emission wavelengths from the gain spectra as a function of material gain for conventional 30-Å QW, two-layer staggered 20-Å QW and three-layer staggered 5-Å QW.

Image of FIG. 16.
FIG. 16.

Material gain vs. total current density for conventional 30-Å QW, two-layer staggered 20-Å QW and three-layer staggered 5-Å QW with monomolecular recombination rate of , , and .

Tables

Generic image for table
Table I.

Total threshold current densities for conventional InGaN QW (24-Å ), two-layer staggered InGaN QW (12-Å ) and three-layer staggered InGaN QW (6-Å QW) with various monomolecular recombination rates . The laser devices were designed for lasing wavelength at 435–440 nm.

Generic image for table
Table II.

Total threshold current densities for conventional InGaN QW (30-Å ), two-layer staggered InGaN QW (20-Å ) and three-layer staggered InGaN QW (5-Å QW) with various monomolecular recombination rates . The staggered InGaN QW lasers have lasing wavelength at , while the lasing wavelength of conventional InGaN QW is .

Loading

Article metrics loading...

/content/aip/journal/jap/107/11/10.1063/1.3407564
2010-06-09
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical gain characteristics of staggered InGaN quantum wells lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/11/10.1063/1.3407564
10.1063/1.3407564
SEARCH_EXPAND_ITEM