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Etching characteristics of organic low- films interpreted by internal parameters employing a combinatorial plasma process in an inductively coupled plasma
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10.1063/1.3415535
/content/aip/journal/jap/107/11/10.1063/1.3415535
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/11/10.1063/1.3415535

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the CPP system and systems for measuring internal parameters.

Image of FIG. 2.
FIG. 2.

Two-dimensional spatial distributions of plasma densities (per cubic centimeter) in the plane at in an Ar discharge.

Image of FIG. 3.
FIG. 3.

Comparison of spatial distributions of plasma densities obtained by simulation and experiment for an identical condition.

Image of FIG. 4.
FIG. 4.

(a) Electron densities and (b) H and N radical densities measured by a Langmuir probe and VUVAS, respectively. (c) Etch rates of SiLK films measured by a spectroscopic ellipsometer using single spot measurements.

Image of FIG. 5.
FIG. 5.

Spatial distributions of (a) electron densities measured by Langmuir probe and (b) H and N radical densities measured by VUVAS. (c) Etch rates of SiLK films measured by a spectroscopic ellipsometer in CPP.

Image of FIG. 6.
FIG. 6.

Etch rate characteristics interpreted in terms of internal parameters in single spot measurements and CPP.

Image of FIG. 7.
FIG. 7.

Normalized optical emission intensities of H and N atoms (a) as a function of input power by single spot measurements and (b) as a function of position in CPP.

Image of FIG. 8.
FIG. 8.

Etch rates of SiLK films evaluated by PAPE method in (a) single spot measurements and (b) CPP.

Image of FIG. 9.
FIG. 9.

Comparison of etch rates interpreted in terms of internal parameters between CPP and single spot measurements.

Tables

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Table I.

Detailed experimental conditions.

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/content/aip/journal/jap/107/11/10.1063/1.3415535
2010-06-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching characteristics of organic low-k films interpreted by internal parameters employing a combinatorial plasma process in an inductively coupled H2/N2 plasma
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/11/10.1063/1.3415535
10.1063/1.3415535
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