Schematic diagram of the CPP system and systems for measuring internal parameters.
Two-dimensional spatial distributions of plasma densities (per cubic centimeter) in the plane at in an Ar discharge.
Comparison of spatial distributions of plasma densities obtained by simulation and experiment for an identical condition.
(a) Electron densities and (b) H and N radical densities measured by a Langmuir probe and VUVAS, respectively. (c) Etch rates of SiLK films measured by a spectroscopic ellipsometer using single spot measurements.
Spatial distributions of (a) electron densities measured by Langmuir probe and (b) H and N radical densities measured by VUVAS. (c) Etch rates of SiLK films measured by a spectroscopic ellipsometer in CPP.
Etch rate characteristics interpreted in terms of internal parameters in single spot measurements and CPP.
Normalized optical emission intensities of H and N atoms (a) as a function of input power by single spot measurements and (b) as a function of position in CPP.
Etch rates of SiLK films evaluated by PAPE method in (a) single spot measurements and (b) CPP.
Comparison of etch rates interpreted in terms of internal parameters between CPP and single spot measurements.
Detailed experimental conditions.
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