1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Hole transport and photoluminescence in Mg-doped InN
Rent:
Rent this article for
USD
10.1063/1.3427564
/content/aip/journal/jap/107/11/10.1063/1.3427564
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/11/10.1063/1.3427564

Figures

Image of FIG. 1.
FIG. 1.

Calculated carrier concentration dependence of the thermopower at 300 K of n- and p-type InN using Eq. (1).

Image of FIG. 2.
FIG. 2.

(a) Illustration of n-type InN with surface and interface accumulation layers (blue), (b) illustration of p-type InN with p-type bulk (red) and surface/interface inversion layers (blue). The inversion and accumulation layer thicknesses are exaggerated here; in reality the surface layers are on the order of 10 nm thick while the films are on the order of 0.5 to thick.

Image of FIG. 3.
FIG. 3.

(a) Measured Seebeck coefficient of Mg-doped InN samples as a function of temperature. SIMS Mg content shown in legend. (b) Measured Seebeck coefficient of Mg-doped InN samples at room temperature as a function of the Mg concentration measured by SIMS.

Image of FIG. 4.
FIG. 4.

Mott–Schottky plot (area divided by capacitance, the quantity squared vs voltage, plotted here as potential relative to a standard calomel electrode) showing all of the Mg-doped samples and one undoped sample (GS1690, ) for reference. The curves are each plotted on their own log scale and vertically offset for clarity; the hashes on the right hand side mark the maximum for each curve. Samples with positive (negative) Seebeck coefficients at room temperature are shown in red (black) with open (closed) symbols. The blue dashed line is a guide for the eye.

Image of FIG. 5.
FIG. 5.

(a) PL spectra at of the sample with the lowest Mg content, 101107C , for several different laser excitation intensities, vertically offset for clarity. Two peaks are clearly resolved: one associated with band-to-band emission , the other with band-to-acceptor transitions as explained in the text. (b) Peak PL intensity is plotted as a function of pumping laser power. The dashed line in (b) is a linear fit to the data.

Tables

Generic image for table
Table I.

Summary of electrical and thermoelectric data for Mg-doped InN at room temperature as measured by SIMS, Hall effect, and thermopower measurements. Sheet electron concentrations are reported since the presence of parallel conducting layers precludes a quantitative measurement of the bulk carrier concentration in some samples.

Loading

Article metrics loading...

/content/aip/journal/jap/107/11/10.1063/1.3427564
2010-06-10
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole transport and photoluminescence in Mg-doped InN
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/11/10.1063/1.3427564
10.1063/1.3427564
SEARCH_EXPAND_ITEM