Material properties of the ZnO MESFET devices. (a) Optical microscopic image of the MESFET; highlighted corners indicate the source and drain contacts (background: laser-printed logo of the graduate school BuildMoNa on an overhead transparency). The source-drain contacts (gate contact) have an average transmission of 87% (62%) in the visible spectral range. (b) AFM image of the MESFET between source and gate at the edge of the channel mesa; the colors indicate the different surfaces of source (89 nm ZnO:Al), gate , channel (30 nm ZnO), and substrate . (c) Transmission spectra of the transparent gate contacts on ZnO. The fundamental band gaps of ZnO and are indicated by dashed lines. (d) XRD pattern of the ZnO channel film.
measurements of transparent MESFETs. (a) Output characteristic of an -gate MESFET. (b) Transfer characteristics of an - and -gate MESFET. (c) Statistics on -gate MESFETs showing the distribution of the channel mobility and on/off-ratio.
Comparison of device parameters for reported transparent field-effect transistors. (a) Gate-voltage sweep vs on/off-ratio and channel mobility. The green box represents the requirements for the use in transparent electronics. Nearest points from Refs. 15 and 16 are marked with drop lines. (b) Subthreshold slope vs channel mobility. Dashed line denotes thermodynamic limit.
Characteristics of a transparent -gate inverter. (a) Schematic circuit and optical microscopic image of the inverter. (b) Voltage-transfer curve. (c) Gain vs input voltage of the shown inverter with a peak gain magnitude of 196. (d) Peak gain magnitude and uncertainty level as a function of the operating voltage .
Comparison of transparent inverter device parameters. : peak gain magnitude, : voltage at , : uncertainty level, and : operating voltage.
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