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Identification of the nature of trapping centers in polyspirobifluorene based diodes by using electrical characterization
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10.1063/1.3428962
/content/aip/journal/jap/107/12/10.1063/1.3428962
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/12/10.1063/1.3428962

Figures

Image of FIG. 1.
FIG. 1.

characteristics of a ITO–PEDOT:PSS–copolymer–Pd diode measured in the temperature range (220–340 K) using a double logarithmic scale. Inset: parameter determined from characteristics as a function of .

Image of FIG. 2.
FIG. 2.

-DLTS spectra measured at in a ITO–PEDOT:PSS–copolymer–Ba–Al double injection device using a charging voltage of and different charging times in the range 1 ms (○) −2 s (▼). Inset: resolution of -DLTS spectrum (●) in double injection devices at using a charging time of , a charging voltage of . The components have been computed from resolution technique and the relaxation time of each -DLTS peak obtained from spectra measured with different charging times . The fitted curve (○) is shown for comparison.

Image of FIG. 3.
FIG. 3.

-DLTS spectra measured at in hole-only devices using a charging voltage of and different charging times in the range 1 ms (○) −2 s (▼).

Image of FIG. 4.
FIG. 4.

-DLTS spectra measured at in hole-only devices using a charging voltage of and different charging times in the range 1 ms (○) −2 s (▼).

Image of FIG. 5.
FIG. 5.

-DLTS spectra recorded in double injection (●) and hole-only (○) devices using a charging voltage of and a charging time of at . Inset: resolution of -DLTS spectrum (●) hole-only devices at using a charging time of , a charging voltage of . The components have been computed from resolution technique and the relaxation time of each -DLTS peak obtained from spectra measured with different charging times . The fitted curve (○) is shown for comparison.

Image of FIG. 6.
FIG. 6.

Comparison of TSC spectra of double injection (●,○) and hole-only (◼,◻) devices with charging voltages of and and . Inset: Resolution of TSC spectrum of hole-only devices at using a charging voltage of . The components have been computed from resolution technique using Cowell–Woods analyses. The fitted curve (○) is shown for comparison.

Image of FIG. 7.
FIG. 7.

Variation in the released charge corresponding to TSC peaks (A, B, C, and D) as a function of the applied voltage , measured in double injection devices.

Image of FIG. 8.
FIG. 8.

TSC spectrum of double injection devices obtained by using UV light excitation with an applied voltage and a driving voltage .

Image of FIG. 9.
FIG. 9.

Energy distribution of traps obtained in a hole-only device from fractional TSC measurements in the temperature range (90–250 K) with with the following simulation parameters: (○) , , (type A) and (◻) , , (type E).

Image of FIG. 10.
FIG. 10.

TSC spectrum of ITO/polyspirobifluorene/BaAl with a charging voltage of and .

Tables

Generic image for table
Table I.

Trap parameters in double injection and hole-only devices obtained from -DLTS analyses.

Generic image for table
Table II.

Trap parameters in double injection and hole-only devices obtained from TSC analyses. The correspondence between trap types determined from -DLTS and TSC spectra is also reported.

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/content/aip/journal/jap/107/12/10.1063/1.3428962
2010-06-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of the nature of trapping centers in polyspirobifluorene based diodes by using electrical characterization
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/12/10.1063/1.3428962
10.1063/1.3428962
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