Schematic diagram of damascene gate pMOSFETs after dummy gate removal.
Raman intensity profile at cleaved Si edge to calculate beam spot size.
Raman peak shift during 24 h measurement for Cz-silicon every 15 min.
Raman spectra in channel center obtained from .
Channel strain distribution obtained from (a) , (b) , and (c) 260 nm.
Raman peak shift distribution in patterned tensile films with various spacing on SOI substrate.
Raman spectrum in channel center obtained from (a) laser exposure and (b) 40 min, respectively. The Lgate is 160 nm and the gate width is .
Raman spectra obtained with 40 min laser exposure from damascene-gate pFETs (a) with and (b) without eSiGe. Red, blue, and green lines signified the fitting line for each peak. The Lgate is 40 nm and the Wgate is .
Raman peak shift (left axis) and channel lateral stress (right axis) dependence on Lgate for pMOSFET with and without eSiGe. The Wgate is .
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