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Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy
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10.1063/1.3436598
/content/aip/journal/jap/107/12/10.1063/1.3436598
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/12/10.1063/1.3436598
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of damascene gate pMOSFETs after dummy gate removal.

Image of FIG. 2.
FIG. 2.

Raman intensity profile at cleaved Si edge to calculate beam spot size.

Image of FIG. 3.
FIG. 3.

Raman peak shift during 24 h measurement for Cz-silicon every 15 min.

Image of FIG. 4.
FIG. 4.

Raman spectra in channel center obtained from .

Image of FIG. 5.
FIG. 5.

Channel strain distribution obtained from (a) , (b) , and (c) 260 nm.

Image of FIG. 6.
FIG. 6.

Raman peak shift distribution in patterned tensile films with various spacing on SOI substrate.

Image of FIG. 7.
FIG. 7.

Raman spectrum in channel center obtained from (a) laser exposure and (b) 40 min, respectively. The Lgate is 160 nm and the gate width is .

Image of FIG. 8.
FIG. 8.

Raman spectra obtained with 40 min laser exposure from damascene-gate pFETs (a) with and (b) without eSiGe. Red, blue, and green lines signified the fitting line for each peak. The Lgate is 40 nm and the Wgate is .

Image of FIG. 9.
FIG. 9.

Raman peak shift (left axis) and channel lateral stress (right axis) dependence on Lgate for pMOSFET with and without eSiGe. The Wgate is .

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/content/aip/journal/jap/107/12/10.1063/1.3436598
2010-06-21
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/12/10.1063/1.3436598
10.1063/1.3436598
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