1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films
Rent:
Rent this article for
USD
10.1063/1.3447981
/content/aip/journal/jap/107/12/10.1063/1.3447981
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/12/10.1063/1.3447981

Figures

Image of FIG. 1.
FIG. 1.

(a) Typical AFM image of GZO film with thickness of 200 nm and (b) variation in rms roughness of GZO films as a function of film thickness.

Image of FIG. 2.
FIG. 2.

Variation in of (0002) rocking curve in GZO films as a function of film thickness.

Image of FIG. 3.
FIG. 3.

Variation in grain size, , of GZO films as a function of film thickness.

Image of FIG. 4.
FIG. 4.

Variation in (a) -axis lattice parameter, , -axis lattice parameter, , and (b) volume of the unit cell, , of GZO films as a function of film thickness.

Image of FIG. 5.
FIG. 5.

Variation in (a) resistivity, , (b) carrier concentration, , and Hall mobility, , of GZO films as a function of film thickness.

Image of FIG. 6.
FIG. 6.

Typical spectral data measured at an incidence angle of 65° for GZO film with thickness of 200 nm. The and data are plotted as open circles and open squares, respectively. To show the spectra clearly, only every third points are plotted. Value of MSE for this best-fit is 141.

Image of FIG. 7.
FIG. 7.

Variation in electron effective mass, , of GZO films as a function of .

Image of FIG. 8.
FIG. 8.

Comparison of Hall mobility, , and optical mobility, , of GZO films as a function of film thickness.

Tables

Generic image for table
Table I.

Deposition condition of the GZO films by ion-plating deposition with dc arc-discharge. (SCCM denotes cubic centimeter per minute at STP.)

Generic image for table
Table II.

Parameter values obtained from the best fit to the SE spectral data. Error limits for the parameter values are calculated from the MSE function. The MSE for the best fit is also shown.

Loading

Article metrics loading...

/content/aip/journal/jap/107/12/10.1063/1.3447981
2010-06-29
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/12/10.1063/1.3447981
10.1063/1.3447981
SEARCH_EXPAND_ITEM