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The dependence of the oxidation enhancement of InP(100) surface on the coverage of the adsorbed Cs
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10.1063/1.3452384
/content/aip/journal/jap/107/12/10.1063/1.3452384
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/12/10.1063/1.3452384
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) and (b) spectra for a InP(100) sample with 0.6 ML of Cs on the surface dosed with 0.2–1000 L of .

Image of FIG. 2.
FIG. 2.

spectra for a InP(100) sample with 0.6 ML of Cs on the surface dosed with (a) 0 L, (b) 0.4 L, (c) 1 L, and (d) 1000 L of . The dots are the experimental data and the lines are the numerical fitting.

Image of FIG. 3.
FIG. 3.

spectra for a InP(100) sample with 0.6 ML of Cs on the surface dosed with (a) 0 L, (b) 0.4 L, (c) 1 L, and (d) 1000 L of . The dots are the experimental data and the lines are the numerical fitting.

Image of FIG. 4.
FIG. 4.

(a) and (b) spectra for InP(100) samples with 0.2, 0.5, 0.6, and 1.0 ML of Cs dosed with 1000 L of .

Image of FIG. 5.
FIG. 5.

The ratios between the oxide peak and the bulk peak for and as a function of Cs coverage for InP(100) samples dosed with 1000 L of .

Image of FIG. 6.
FIG. 6.

Schematic side view of the Cs atoms on the InP(100) substrate. The Cs atoms in the first half-ML are positive charged after they donate their electrons to the InP substrate. The Cs atoms in the second half-ML retain their electrons and are readily to give up the electrons to . The filling of antibonding molecular orbital facilitates the dissociation of and the oxidation of the InP substrate.

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/content/aip/journal/jap/107/12/10.1063/1.3452384
2010-06-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The dependence of the oxidation enhancement of InP(100) surface on the coverage of the adsorbed Cs
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/12/10.1063/1.3452384
10.1063/1.3452384
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