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A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation
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10.1063/1.3277017
/content/aip/journal/jap/107/2/10.1063/1.3277017
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3277017
/content/aip/journal/jap/107/2/10.1063/1.3277017
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/content/aip/journal/jap/107/2/10.1063/1.3277017
2010-01-27
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3277017
10.1063/1.3277017
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