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A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation
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10.1063/1.3277017
/content/aip/journal/jap/107/2/10.1063/1.3277017
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3277017

Figures

Image of FIG. 1.
FIG. 1.

(a) Top view of a bulk silicon NMOS transistor (b) Leakage path between source and drain caused by radiation (gate width direction).

Image of FIG. 2.
FIG. 2.

Measured drain current as a function of the gate voltage , before and after radiation for NMOSFET.

Image of FIG. 3.
FIG. 3.

Cross section of an NMOSFET along the cutline (in Fig. 1) shows the parasitic transistors and the angle of STI region.

Image of FIG. 4.
FIG. 4.

Comparison between the model-predicted results (symbols) and the experimental data (solid lines) of MOSFETs before and after irradiation. (a) and and (b) and .

Image of FIG. 5.
FIG. 5.

Dependence of the off-state leakage current on the total dose.

Tables

Generic image for table
Table I.

Coefficients for the empirical function of nonrecombination .

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/content/aip/journal/jap/107/2/10.1063/1.3277017
2010-01-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3277017
10.1063/1.3277017
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