(a) Top view of a bulk silicon NMOS transistor (b) Leakage path between source and drain caused by radiation (gate width direction).
Measured drain current as a function of the gate voltage , before and after radiation for NMOSFET.
Cross section of an NMOSFET along the cutline (in Fig. 1) shows the parasitic transistors and the angle of STI region.
Comparison between the model-predicted results (symbols) and the experimental data (solid lines) of MOSFETs before and after irradiation. (a) and and (b) and .
Dependence of the off-state leakage current on the total dose.
Coefficients for the empirical function of nonrecombination .
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