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Transport properties and electronic states of anatase epitaxial thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

Resistivity of films at 300 K as functions of (a) W content , which is a nominal value, and (b) substrate temperature .

Image of FIG. 2.
FIG. 2.

(a) Typical XRD pattern of anatase thin film deposited on LSAT. The inset shows the XRD pattern. (b) Lengths of the -axis (triangles) and -axis (circles) of the anatase structure as functions of W content .

Image of FIG. 3.
FIG. 3.

(a) Resistivity , (b) carrier concentration , and (c) Hall mobility of and as functions of temperature. Solid and dashed curves denote the transport properties of and , respectively.

Image of FIG. 4.
FIG. 4.

Ti and W core-level spectra of the film obtained with a photon energy of 1486.6 eV (monochromatic x ray). Circles indicate experimental data, solid curves (orange, blue, and red lines) represent the components of Ti , , and , respectively, obtained by least square fitting. The dashed curve (green line) is the background, and the dotted curve (gray line) represents the total fitting result.

Image of FIG. 5.
FIG. 5.

X-ray photoemission spectra of the films. Inset: Ti on- and off-resonant photoemission spectra obtained with photon energies of and 600 eV, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport properties and electronic states of anatase Ti1−xWxO2 epitaxial thin films