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Synthesis of crystalline Si quantum dots by millisecond laser irradiation of layers
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10.1063/1.3282660
/content/aip/journal/jap/107/2/10.1063/1.3282660
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3282660
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Si excess concentration as a function of the deposition ratio.

Image of FIG. 2.
FIG. 2.

Cross-sectional EFTEM micrographs of the sample prepared using after laser irradiation (a) or furnace thermal process (c). The electron energy loss spectra (closed circles) fitted using the theoretical approach developed by Barrera and Fuchs (continuous lines) of the same samples are shown in (b) and (d), respectively.

Image of FIG. 3.
FIG. 3.

The amount of agglomerated Si, defined as , after laser processing and furnace processing as a function of the ratio.

Image of FIG. 4.
FIG. 4.

PL spectra of samples annealed only by furnace or samples annealed by laser and by furnace in the same conditions. In parenthesis near each label is indicated the PL signal lifetime at 850 nm.

Image of FIG. 5.
FIG. 5.

Normalized number of emitting centers measured in samples annealed only by furnace or samples annealed by laser and by furnace in the same conditions.

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/content/aip/journal/jap/107/2/10.1063/1.3282660
2010-01-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Synthesis of crystalline Si quantum dots by millisecond laser irradiation of SiOxNy layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3282660
10.1063/1.3282660
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