Si excess concentration as a function of the deposition ratio.
Cross-sectional EFTEM micrographs of the sample prepared using after laser irradiation (a) or furnace thermal process (c). The electron energy loss spectra (closed circles) fitted using the theoretical approach developed by Barrera and Fuchs (continuous lines) of the same samples are shown in (b) and (d), respectively.
The amount of agglomerated Si, defined as , after laser processing and furnace processing as a function of the ratio.
PL spectra of samples annealed only by furnace or samples annealed by laser and by furnace in the same conditions. In parenthesis near each label is indicated the PL signal lifetime at 850 nm.
Normalized number of emitting centers measured in samples annealed only by furnace or samples annealed by laser and by furnace in the same conditions.
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