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Characterization of unintentional doping in nonpolar GaN
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Image of FIG. 1.
FIG. 1.

Montages of SCM phase data for samples with different growth conditions: (a) sample A with 0 s 3D growth, (b) sample B with 600 s 3D growth then coalesced, and (c) sample C with 2400 s 3D growth then coalesced.

Image of FIG. 2.
FIG. 2.

Variation in conductive interface layer thickness and top surface rms roughness with 3D growth time.

Image of FIG. 3.
FIG. 3.

Quantification of carrier concentration in the conductive interface region: (a) SCM amplitude image of the conductive interface region and the calibration dopant staircase structure, (b) SCM amplitude data from the Si-doped calibration staircase structure is averaged in the slow-scan (vertical) direction to form a line profile, (c) a calibration curve is constructed between log (doping concentration from SIMS) and SCM amplitude data, showing a roughly linear relationship, and the average carrier concentration over the conductive interface region is then estimated, and (d) the carrier concentration decreases along the inclined feature away from the GaN/sapphire interface.

Image of FIG. 4.
FIG. 4.

Low temperature (6 K) CL spectrum of sample C in cross section revealing two emission peaks at 3.41 and 3.30 eV, associated with BSFs and PSFs, respectively.

Image of FIG. 5.
FIG. 5.

Cross-sectional monochromatic CL images of sample C showing luminescence at (a) 3.41 eV and (b) 3.30 eV, related with BSFs and PSFs, respectively.

Image of FIG. 6.
FIG. 6.

Cross-sectional TEM image of sample B viewed along [0001] using . Red arrows indicate PSFs extending at ±60° from the GaN/sapphire interface, and the white dash line indicates the position where dislocation lines change direction.


Generic image for table
Table I.

A summary of growth conditions for samples A–C.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of unintentional doping in nonpolar GaN