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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
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10.1063/1.3291101
/content/aip/journal/jap/107/2/10.1063/1.3291101
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3291101
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of sample 2 with gate covered by a field plate.

Image of FIG. 2.
FIG. 2.

Output characteristics and the emission intensity for sample 1 at gate biases (squares) and for sample 2 at (solid line).

Image of FIG. 3.
FIG. 3.

The Emission spectra for GaN/AlGaN transistor at . Inset (a): the emission interferogram at and . Inset (b): full width at half maximum of the spectra as a function of (dotted line is a guide to the eye).

Image of FIG. 4.
FIG. 4.

Position of emission spectrum as a function of gate bias for AlGaN/GaN transistors with gate length 150 and 250 nm at drain to source voltage . Solid lines are calculations using Eqs. (1) and (2).

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/content/aip/journal/jap/107/2/10.1063/1.3291101
2010-01-22
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3291101
10.1063/1.3291101
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