Schematics of sample 2 with gate covered by a field plate.
Output characteristics and the emission intensity for sample 1 at gate biases (squares) and for sample 2 at (solid line).
The Emission spectra for GaN/AlGaN transistor at . Inset (a): the emission interferogram at and . Inset (b): full width at half maximum of the spectra as a function of (dotted line is a guide to the eye).
Position of emission spectrum as a function of gate bias for AlGaN/GaN transistors with gate length 150 and 250 nm at drain to source voltage . Solid lines are calculations using Eqs. (1) and (2).
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