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Probing Cu doped based resistance switching memory devices with random telegraph noise
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10.1063/1.3291132
/content/aip/journal/jap/107/2/10.1063/1.3291132
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3291132
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of a Cu doped based memory cell. (b) Room temperature characteristics of a memory cell programmed by using different settings of the current compliance . (c) Time records of unstable RTN fluctuations measured at 300 K under an applied current of on a memory cell in a LRS of . (d) Time records of unstable RTN fluctuations measured at 300 K under an applied current of on a memory cell in a HRS of .

Image of FIG. 2.
FIG. 2.

(a) Time records of stable RTN fluctuations measured at 240 K under an applied current of on a memory cell in a LRS of . (b) Measured (open symbols) and calculated (straight line) voltage noise spectral power density for the memory cell with the two level RTN shown in (a). (c) Histograms of the up and down times for the RTN signal showing that the times in both states follow an exponential distribution.

Image of FIG. 3.
FIG. 3.

(a) One dimensional representation of the 3D ion hopping model for Cu doped SE based memory cells. (b) Time records of stable RTN fluctuations measured at 240 K under varying applied currents (i.e., potential drops) on a memory cell in a LRS of . (c) The ratio of the average lifetimes for the up and down state of the RTN fluctuator as a function of the average applied electric field and current flow through the memory cell. (d)-(e) Schematics of an asymmetric double-well potential for a fluctuating Cu ion without (d) and with (e) an applied electric field showing the deformation of the potential wells under applied bias.

Image of FIG. 4.
FIG. 4.

(a) Temperature dependence of the RTN signal of a memory cell in a LRS of . A constant current of was flowing through the memory cell during the measurements. (b) Arrhenius plot of the average lifetimes for the up and down states of the RTN fluctuator in the LRS of the device. (c) Temperature dependence of the RTN signal of a memory cell in a HRS of . A constant current of was flowing through the memory cell during the measurements. (d) Arrhenius plot of the average lifetimes for the up and down states of the RTN fluctuator in the HRS of the device.

Image of FIG. 5.
FIG. 5.

(a) Typical relative resistance fluctuations, , vs the programmed sample resistance of Cu doped SE based memory cells measured at room temperature under current flow. (b) A giant RTN signal with observed on a Cu doped SE based memory cell in a HRS of measured at room temperature under current flow.

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/content/aip/journal/jap/107/2/10.1063/1.3291132
2010-01-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/2/10.1063/1.3291132
10.1063/1.3291132
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